Tokyo Electron Limited

Yi Hao Ng

Kazuki Narishige

Chiew Wah Yap

Seiichi Watanabe

Kenji Komatsu

Takehito Watanabe

Koji Kawamura

Bin Zhao

Zhenkang Max Liang

Yujun Nicholas Loo

Chai Jin Chua

Xinhe Jerry Lim

Li Jin

Dali Liu

Jianfeng Xu

Wee Teck Tan

A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.

Substrate processing method and substrate processing apparatus

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Miyagi, Japan

Yi Hao Ng