Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Hann Chen

Ming-Te Chen

Tsun-Jen Chan

Cheng-Hung Hu

Kun-Hsiang Lin

Kang Hua Chang

Lee-Te Tseng

Chih-Hsien Ou

A system includes an implantation chamber; a warming chamber, wherein the warming chamber is outside of the implantation chamber and has a sidewall shared with the implantation chamber; a first robotic arm configured to move a first wafer from the implantation chamber into the warming chamber; and a second robotic arm configured to move a second wafer into the implantation chamber.

High-throughput system and method for post-implantation single wafer warm-up

A high throughput system for warming a wafer to a desired temperature after undergoing a low-temperature implantation process includes an implantation chamber, a wafer warming chamber configured to uniformly warm a single wafer, and a plurality of robotic arms to transfer wafers throughout the system. At each stage in the fabrication process, the robotic arms simultaneously work with multiple wafers and, therefore, the system provides a high throughput process. Also, the warming chamber may be a vacuum environment, thus eliminating the mist-condensation problem that results in wafer spotting.

Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example.

Growing community of inventors

Hsinchu, Taiwan

Yi-Hann Chen