Mosel Vitelic Corporation

Yi Fu Chung

Jen Chieh Chang

Pei-Feng Sun

Shih-Chi Lai

Tun-Fu Hung

Ching-Cheng Hsieh

A fabrication method for forming a gate structure through an amorphous silicon layer includes providing a substrate layer, forming an amorphous silicon layer of a selected thickness on the substrate layer at a reaction temperature between about 520&#xb0; C. and 560&#xb0; C., and forming a doped amorphous silicon layer in a upper portion of the amorphous silicon layer at a reaction temperature between about 520&#xb0; C. and 560&#xb0; C.

Method for forming a gate structure through an amorphous silicon layer and applications thereof

A wafer and the manufacturing and reclaiming methods thereof are disclosed. The wafer includes a semiconductor substrate and a protective layer formed on the surface of the semiconductor substrate. The reclaiming method of the wafer includes providing a wafer having a semiconductor substrate, a protective layer formed on the semiconductor substrate, and a polysilicon layer formed on the protective layer; and removing the polysilicon layer. The wafer and the reclaiming method of the wafer can prevent the substrate of the wafer from being destroyed during the reclaiming process and increase the reclaiming rate of the wafer.

Wafer and the manufacturing and reclaiming methods thereof

Embodiments of the invention provide a method of manufacturing a Schottky diode device. In one embodiment, the method includes: (a) providing a substrate; (b) sequentially forming a gate oxide layer and a polysilicon layer on the substrate; (c) partially oxidizing the polysilicon layer to form a poly oxide layer on the polysilicon layer; (d) forming and defining a photoresist layer on the poly oxide layer for exposing parts of the poly oxide layer; (e) etching the poly oxide layer, the polysilicon layer and the gate oxide layer via the photoresist layer for forming a poly oxide structure, a polysilicon structure and a gate oxide structure; and (f) removing the photoresist layer. The present invention introduces a poly oxide layer instead of the CVD oxide for preventing the photoresist lifting issue.

Method of manufacturing Schottky diode device

A method for forming a field oxide is disclosed. In one embodiment, the method comprises providing a semiconductor structure having a substrate, a pad oxide, and a patterned barrier layer, performing a dry oxidation process to form a first field oxide on the substrate in a region not covered with the barrier layer by introducing pure dry oxygen, and performing a wet oxidation process to form a second field oxide adjacent the first field oxide by introducing hydrogen and oxygen. The method of the present invention can improve the quality and electrical property of the semiconductor device, increase the yield, and reduce the cost.

Method for forming field oxide

A method for forming a trench having rounded corners in a semiconductor device comprises providing a substrate; forming a first pad oxide layer, a first silicon nitride layer, and a first oxide layer on the substrate sequentially; removing portions of the first oxide layer, the first silicon nitride layer, the first pad oxide layer, and the substrate to form at least one trench; and removing portions of the first oxide layer, the first silicon nitride layer, and the first pad oxide layer in the trench above an upper corner of the substrate in the trench. The substrate includes a lower corner at a bottom of the trench. The method further comprises forming a second pad oxide layer in the trench; forming a second silicon nitride layer on the second pad oxide layer and the first oxide layer; removing portions of the second silicon nitride layer to expose the second pad oxide layer on the corners and the bottom of the trench; forming a thermal oxide layer on the second pad oxide layer exposed by removing the portions of the second nitride layer; and removing the second silicon nitride layer, the thermal oxide layer, and the second pad oxide layer.

Method of forming rounded corner in trench

A few-particle-induced low-pressure TEOS process is disclosed. First, a lot of semiconductor substrates are arranged on a boat and transferred into a TEOS reactor. Silicon oxide films are then deposited on the semiconductor substrates by performing a low-pressure TEOS process. Before the substrates are sent out of the reactor, an annealing process is performed by injecting oxygen gas into the reactor to solidify the oxide films on the corners of the boat's flanges.

Growing community of inventors

Hsinchu, Taiwan

Yi Fu Chung