Advanced Semiconductor Engineering, Inc.

Yi-Chuan Ding

Kun-Ching Chen

Chia-Ching Chen

Guo-Cheng Liao

In-De Ou

Yun-Hsiang Tien

Min-Lung Huang

Yung-I Yeh

Yung-Jen Chen

Xin Hui Lee

Yuan-Chang Su

Chun-Che Lee

Po-Jen Cheng

Chih-Ming Chung

Chang-Chi Lee

Ying-Chih Chen

Wen-Chi Cheng

Jia-Cheng Chen

Ming-Jiun Lai

A semiconductor package structure includes a substrate, a semiconductor chip, and a solder material. The substrate includes an insulating layer, a conductive circuit layer, and a conductive bump. The conductive circuit layer is recessed from a top surface of the insulating layer. The conductive circuit layer includes a pad, and a side surface of the pad extends along a side surface of the insulating layer. The conductive bump is disposed on the pad. A side surface of the conductive bump, a top surface of the pad and the side surface of the insulating layer together define an accommodating space. A solder material electrically connects the conductive bump and the semiconductor chip. A portion of the solder material is disposed in the accommodating space.

Semiconductor substrate and semiconductor package structure having the same

In accordance with the present invention, there is provided a semiconductor device comprising a semiconductor die or chip, a package body and a through package body via. The semiconductor chip includes a plurality of conductive pads. The package body encapsulates a sidewall of the semiconductor chip, and has at least one hole formed therein having a sidewall which is of a prescribed first surface roughness value. The through package body via is disposed in the hole of the package body and comprises a dielectric material and at least one conductive interconnection metal. The dielectric material is disposed on the sidewall of the hole and defines at least one bore having a sidewall which is of a second surface roughness value less than the first surface roughness value. The interconnection metal is disposed within the bore.

Semiconductor device having conductive via and manufacturing process for same

The present disclosure relates to a semiconductor package structure including a semiconductor substrate, a semiconductor chip and a conductive material. The semiconductor substrate includes an insulating layer, a conductive circuit layer and a conductive bump. The conductive circuit layer is recessed from the top surface of the insulating layer, and includes at least one pad. The conductive bump is disposed on the at least one pad. A side surface of the conductive bump, a top surface of the at least one pad and a side surface of the insulating layer together define an accommodating space. The conductive material is electrically connected the conductive bump and the semiconductor chip, and a portion of the conductive material is disposed in the accommodating space.

Semiconductor device having conductive via and manufacturing process

A semiconductor package includes a set of stud bumps, which can be formed by wire bonding technology and can be bonded or joined to a semiconductor element to form a stacked package assembly. Since the process of bonding the semiconductor element to the stud bumps can be carried out without reflow, an undesirable deformation resulting from high temperatures can be controlled or reduced.

Stackable semiconductor package and manufacturing method thereof

The present disclosure provides a substrate and a semiconductor package. The substrate includes a body, at least one pad group, a plurality of traces and at least one pillar group. The pad group includes a plurality of pads. Each pad has at least one inner side and at least one outer side. The inner side of a first pad is faced to the inner side of an adjacent second pad with a spaced section between. Each pillar group includes a plurality of pillars disposed on respective ones of the pads. The use of pad groups having multiple pads on which to form pillars allows an increase in the number of the pillars available in a given area so as to increase the amount of I/O connections. Furthermore, for a given number of I/O connections, the area occupied by the pads, pillars and traces can be reduced.

Substrate having pillar group and semiconductor package having pillar group

The present disclosure relates to a semiconductor substrate and a method for making the same. The semiconductor substrate includes an insulation layer, a first circuit layer, a second circuit layer, a plurality of conductive vias and a plurality of bumps. The first circuit layer is embedded in a first surface of the insulation layer, and exposed from the first surface of the insulation layer. The second circuit layer is located on a second surface of the insulation layer and electrically connected to the first circuit layer through the conductive vias. The bumps are directly located on part of the first circuit layer, where the lattice of the bumps is the same as that of the first circuit layer.

Semiconductor substrate and method for making the same

An embodiment of a semiconductor device package includes: (1) an interconnection unit including a patterned conductive layer; (2) an electrical interconnect extending substantially vertically from the conductive layer; (3) a semiconductor device adjacent to the interconnection unit and electrically connected to the conductive layer; (4) a package body: (a) substantially covering an upper surface of the interconnection unit and the device; and (b) defining an opening adjacent to an upper surface of the package body and exposing an upper surface of the interconnect; and (5) a connecting element electrically connected to the device, substantially filling the opening, and being exposed at an external periphery of the device package. The upper surface of the interconnect defines a first plane above a second plane defined by at least a portion of the upper surface of the interconnection unit, and below a third plane defined by the upper surface of the package body.

Semiconductor device packages with fan-out and with connecting elements for stacking and manufacturing methods thereof

Semiconductor package including a stacking element

Described herein are wafer-level semiconductor device packages with stacking functionality and related stacked package assemblies and methods. In one embodiment, a semiconductor device package includes a set of connecting elements disposed adjacent to a periphery of a set of stacked semiconductor devices. At least one of the connecting elements is wire-bonded to an active surface of an upper one of the stacked semiconductor devices.

Semiconductor device packages including connecting elements

The present invention discloses a staggered finger configuration comprising a plurality of first and second conducting wires alternately arranged on the substrate, wherein each of the first conducting wire connecting an inner and an outer fingers and each of the second conducting wire connecting an intermediate finger between the inner and the outer fingers, thereby forming a staggered configuration.

Staggered wirebonding configuration

A chip package including a carrier, a chip, a stiffener and a molding compound is provided. A producing method of the chip package includes the steps of disposing a bottom surface of the chip on the carrier; covering an edge of a top surface of the chip with the stiffener for protecting the edge; then wire bonding the top surface of the chip with the carrier; and forming the molding compound for encapsulating the chip, the stiffener and parts of the carrier.

Chip package and producing method thereof

A circuit substrate includes a base and a plurality of conductive traces. The conductive traces are disposed on the base and on the same layer. The conductive traces include at least one first conductive trace. Wherein, the base has a cut region. The end of the first conductive trace is connected to the end portion of the cut region. The included angle between the rim of the end portion of the cut region and the first conductive trace is 75&#xb0; to 105&#xb0;.

Circuit substrate

A multi-chip package substrate for both flip-chip bumping and wire-bonding applications comprises a substrate body having a top surface and a bottom surface. A plurality of bumping pads and a plurality of wire-bonding pads are formed on the top surface. The bumping pads are disposed on the top surface of the substrate body and a pre-solder material is formed on the bumped pads. The wire-bonding pads are disposed on the top surface of the substrate body and a Ni/Au layer is formed on the wire-bonding pads. In order to avoid the bumping pads and the wire-bonding pads from oxidation during packaging processes. The pre-solder material fully covers the bumping pads to avoid the Au intermetallics generated in a plurality of bumps on a bumped chip during packaging processes. The reliability of the multi-chip stacked package for both flip-chip bumping and wire-bonding applications will be greatly improved.

Multi-chip package substrate for flip-chip and wire bonding

The present invention provides a structure and a method for prevention leakage of a substrate strip. The substrate strip includes an edge portion and a plurality of units. A patterned metal layer on a surface of the substrate strip includes at least one plating bus extended to the edge portion, a plurality of plating lines at the units, a plurality of contact pads at the units and a plurality of fiducial marks at the edge portion. The plating bus has an extended trail having one end exposed out of the sidewall of the substrate strip. The fiducial marks and the contact pads are exposed out of a plurality of first openings of a solder mask. The solder mask also has a second opening at the edge portion exposing a portion of the plating bus to define a breaking hole. After forming a surface layer on the fiducial marks and the contact pads, the exposed portion of the plating bus is void of the surface layer. By removing the exposed portion of the plating bus, the breaking hole is formed to electrically isolate the extended trail from the contact pads in order to prevent a chip on the substrate strip from being damaged by ESD (Electrostatic Discharge) during packaging processes.

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Kaohsiung, Taiwan

Yi-Chuan Ding