Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Chao Wang

Li-Ting Wang

Tze-Liang Lee

Tai-Chun Huang

Pei-Ren Jeng

Yu-Chang Lin

Yee-Chia Yeo

Huicheng Chang

Wen-Yen Chen

Tz-Shian Chen

A temperature measuring apparatus for measuring a temperature of a substrate is described. A light emitting source that emits light signals such as laser pulses are applied to the substrate. A detector on the other side of the light emitting source receives the reflected laser pulses. The detector further receives emission signals associated with temperature or energy density that is radiated from the surface of the substrate. The temperature measuring apparatus determines the temperature of the substrate during a thermal process using the received laser pulses and the emission signals. To improve the signal to noise ratio of the reflected laser pulses, a polarizer may be used to polarize the laser pulses to have a S polarization. The angle in which the polarized laser pulses are applied towards the substrate may also be controlled to enhance the signal to noise ratio at the detector's end.

Apparatus, system, and method for measuring the temperature of a substrate

A method includes performing an anneal on a wafer. The wafer includes a wafer-edge region, and an inner region encircled by the wafer-edge region. During the anneal, a first power applied on a portion of the wafer-edge region is at least lower than a second power for annealing the inner region.

Apparatus and methods for annealing wafers

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Hsin-Chu, Taiwan

Yi-Chao Wang