Kla Corporation

Yeurui Chen

Fei Li

Premkumar Panneerchelvam

Chad Huard

Haifeng Pu

Yiting Zhang

Fiddle Han

Ankur Agarwal

A system is disclosed, in accordance with one or more embodiments of the present disclosure. The system includes a metrology tool configured to acquire one or more measurements of a portion of a sample. The system includes a controller including one or more processors configured to execute program instructions causing the one or more processors to: generate a surface kinetics model output based on a surface kinetics model; determine an expected response of the surface kinetics model output to excitation by polarized light; compare the determined expected response to the one or more measurements; generate one or more metrics based on the comparison between the determined expected response and the one or more measurements of the sample; adjust one or more parameters of the surface kinetics model to generate an adjusted surface kinetics model; and apply the adjusted surface kinetics model to simulate on-sample performance during plasma processing.

System and method to adjust a kinetics model of surface reactions during plasma processing

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Milpitas, CA, United States of America

Yeurui Chen