Taiwan Semiconductor Manufacturing Comp. Ltd.

Yen-Kai Huang

Yuan-Chih Chu

Hsun-Chuan Shih

A method for repairing a mask includes receiving a mask having first and second defective regions. A first treatment is performed to the mask. After performing the first treatment, a first repair process is performed on the mask. The first defective region is repaired to form a first repaired defective region. A second treatment is performed to the mask, including the first repaired defective region. After performing the second treatment, a second repair process is performed on the mask. The second defective region is repaired to form a second repaired defective region.

Method for repairing a mask

The present disclosure relates to a method and apparatus for mitigating printable native defects in an extreme ultra violet (EUV) mask substrate. In some embodiments, the method is performed by identifying a printable native defect within an EUV mask substrate that violates one or more sizing thresholds. A first section of the EUV mask substrate including the printable native defect is removed to form a concavity within the EUV mask substrate. A multi-layer replacement section that is devoid of a printable native defect is inserted into the concavity.

Efficient solution for removing EUV native defects

Methods and tools for repairing a semiconductor mask are provided. The method includes steps of positioning the semiconductor mask within a repair chamber including a repair tool, supplying a first gas and a second gas into the repair chamber. The first gas includes a repair material for repairing a defect on the mask, and the second gas includes a polar gas and assists deposition of the repair material on the semiconductor mask. The method further includes steps of activating the repair tool such that the repair tool interacts with the first and second gases to deposit the repair material at the site of the defect to repair the semiconductor mask and removing the repaired semiconductor mask from the repair chamber. A dimension of the deposited repair material is less than about 32 nanometers.

Durable metal film deposition for mask repair

The present disclosure relates to a method and apparatus for mitigating printable native defects in an extreme ultra violet (EUV) mask substrate. In some embodiments, the method is performed by providing an EUV mask substrate having a multi-layer coating disposed over a low thermal expansion material. The sizes of one or more native defects within the EUV mask substrate are measured and printable native defects having a measured size that violates one or more sizing thresholds are identified. A position at which a patterned absorber material is to be formed over the multi-layer coating is determined. The position minimizes a number printable native defects that interact with EUV radiation during an EUV lithography process. By mitigating a number of printable native defects violating the one or more sizing thresholds, the process window of an EUV reticle formed from the EUV mask substrate is improved.

A method for repairing a mask is disclosed. A mask, having multiple defective regions need to be repaired, is received. Locations and sizes of the defective regions are determined. A pre-repair-passivation-treatment (PRPT) is performed to form a passivation membrane over the mask. With the passivation membrane on the mask, a mask repair process is performed to the defective regions on the mask.

The apparatus includes a probe tip configured to scan a substrate having a defect to attach the defect on the probe tip while scanning the substrate, a cantilever configured to integrate a holder holding at least one probe tip, a stage configured to secure the substrate, an electromagnetic radiation source configured to generate the electromagnetic radiation beam, and an electromagnetic radiation detector configured to receive the first electromagnetic radiation signal and the second electromagnetic radiation signal. A first electromagnetic radiation signal is generated while an electromagnetic radiation beam focuses on the probe tip. A second electromagnetic radiation signal is generated while the electromagnetic radiation beam focuses on the sample attached on the probe tip. A chemical analysis of the sample is executed by comparing a difference between the first electromagnetic radiation signal and the second electromagnetic radiation signal.

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Hsinchu, Taiwan

Yen-Kai Huang