Taiwan Semiconductor Manufacturing Comp. Ltd.

Yen-Chan Lo

Ding-I Liu

Po-Hsiung Leu

Kai-Shiung Hsu

Yi-Fang Lai

Si-Wen Liao

Cheng-Tsung Wu

Jheng-Uei Hsieh

Shian-Huei Lin

Jui-Fu Hsu

Keith Kuang-Kuo Koai

Huan-Chieh Chen

Chin-Feng Sun

A thermal chemical vapor deposition (CVD) system includes a bottom chamber, an upper chamber, a workpiece support, a heater and at least one shielding plate. The upper chamber is present over the bottom chamber. The upper chamber and the bottom chamber define a chamber space therebetween. The workpiece support is configured to support a workpiece in the chamber space. The heater is configured to apply heat to the workpiece. The shielding plate is configured to at least partially shield the bottom chamber from the heat.

Thermal chemical vapor deposition system and operating method thereof

A deposition device structure is provided. The deposition device structure includes a heater in a chamber. The deposition device structure also includes a shower head over the heater. The shower head includes holes extending from a top surface of the shower head to a bottom surface of the shower head. The bottom surface of the shower head faces the heater. The bottom surface of the shower head has a first section and a second section. The second section of the bottom surface is rougher than the first section of the bottom surface.

Deposition device structure

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Hsinchu, Taiwan

Yen-Chan Lo