Applied Materials, Inc.

Yehuda Demayo

Ming Xi

Mei Yin Chang

Shulin Wang

Fufa Chen

Ramanujapuram A Srinivas

Frederick C Wu

Russell C Ellwanger

Yin Lin

Zvi Lando

Jianhua Hu

A method of forming a titanium nitride (TiN) layer using a reaction between ammonia (NH ) and titanium tetrachloride (TiCl ). In one embodiment, an NH :TiCl ratio of about 8.5 is used to deposit a TiN layer at a temperature of about 500&deg; C. at a pressure of about 20 torr. In another embodiment, a composite TiN layer is formed by alternately depositing TiN layers of different thicknesses, using process conditions having different NH :TiCl ratios. In one preferred embodiment, a TiN layer of less than about 20 &angst; is formed at an NH :TiCl ratio of about 85, followed by a deposition of a thicker TiN layer at an NH :TiCl ratio of about 8.5. By repeating the alternate film deposition using the two different process conditions, a composite TiN layer is formed. This composite TiN layer has an improved overall step coverage and reduced stress, compared to a standard TiN process, and is suitable for small geometry plug fill applications.

Method of depositing a thick titanium nitride film

The present disclosure pertains to the discovery that TiN films having a thickness of greater than about 400 &angst; and, particularly greater than 1000 &angst;, and a resistivity of less than about 175 &mgr;&OHgr;cm, can be produced by a CVD technique in which a series of TiN layers are deposited to form a desired TiN film thickness. Each layer is deposited employing a CVD deposition/treatment step. During a treatment step, residual halogen (typically chlorine) was removed from the CVD deposited film. Specifically, a TiN film having a thickness of greater than about 400 &angst; was prepared by a multi deposition/treatment step process where individual TiN layers having a thickness of less than 400 &angst; were produced in series to provide a finished TiN layer having a combined desired thickness. Each individual TiN layer was CVD deposited and then treated by exposing the TiN surface to ammonia in an annealing step carried out in an ammonia ambient. The TiN film formed in this manner not only had a resistivity of less than about 175 &mgr;&OHgr;cm, but was substantially free of micro cracks as well, including films having a thickness greater than 1,000 &angst;.

Method for the CVD deposition of a low residual halogen content multi-layered titanium nitride film having a combined thickness greater than 1000 &angst;

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San Jose, CA, United States of America

Yehuda Demayo