Corning Incorporated

Yeguang Pan

Xu Ouyang

Fei Lu

Lance Changyong Kim

A method of forming a carrier wafer includes the steps of: lapping a first surface and a second surface of the carrier wafer such that the carrier wafer is substantially flat, the carrier wafer comprising a glass, glass-ceramic or ceramic material, wherein the carrier wafer has a diameter of from 250 mm to 450 mm and a thickness of from 0.5 mm to 2 mm after lapping; and polishing the first surface of the carrier wafer with at least one of a differential pressure, a differential speed or a differential time between a center portion and an edge portion of the carrier wafer such that the first surface has a convex or concave shape.

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Camas, WA, United States of America

Yeguang Pan