Chinese Academy of Sciences

Yayi Wei

Libin Zhang

Zhen Song

Yajuan Su

Jianfang He

Le Ma

Rui Chen

Lisong Dong

A method for manufacturing a semiconductor device. A photolithographic coating, including a first film, a photolithographic film, and a second film, is formed on the to-be-connected structure. Refractive indexes of the first film and the second film are smaller than 1. The photolithographic coating is exposed to a light having a first wavelength, to image the to-be-connected structure to a first region of the photolithographic film. The photolithographic coating is exposed to a light having a second wavelength through a mask, to image the mask to a second region of the photolithographic film. A region in which the first region and the second region overlap serves as a connection region corresponding to the to-be-connected structure, and thereby self-alignment between a layer of the to-be-connected structure and a layer where a contact hole is arranged is implemented.

Method for manufacturing semiconductor device

The present disclosure provides a method for optimizing mask parameters, and the method includes: acquiring a test pattern, light source parameters, and initial mask parameters, the initial mask parameters including a mask thickness and an initial mask sidewall angle; generating multiple sets of candidate mask parameters according to the initial mask sidewall angle in the initial mask parameters; the multiple sets of candidate mask parameters including different mask sidewall angles and the same mask thickness; obtaining an imaging contrast of each set of candidate mask parameters based on the test pattern and the light source parameters; and selecting an optimal mask sidewall angle from the multiple sets of candidate mask parameters according to the imaging contrasts. By generating multiple sets of candidate mask parameters including different mask sidewall angles and the same mask thickness, and simulating these sets of candidate mask parameters respectively, the imaging contrast of each set of candidate mask parameters is obtained, so that the optimal mask sidewall angle is found according to the imaging contrasts. Therefore, by optimizing the mask parameters of the multi-layer film lens structure, the imaging contrast can also be significantly improved, and the imaging resolution can be improved.

Method and device for optimizing mask parameters

A method for manufacturing a semiconductor device. A photolithographic coating, including a first film, a photolithographic film, and a second film, is formed on the to-be-connected structure. Refractive indexes of the first film and the second film are smaller than 1, so that the photolithographic coating forms an optical structure with a high reflection coefficient. The photolithographic coating is exposed to a light having a target wavelength through a mask. The to-be-connected structure is reflected in the photolithographic coating, and hence serves as another mask and is imaged to the photolithographic film. A pattern of the mask is simultaneously imaged to the photolithographic film. That is, both the to-be-connected structure and the pattern of the mask are imaged to a target region of the photolithographic film, and the target region corresponds to the to-be-connected structure.

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Beijing, China

Yayi Wei