Spp Technologies Co., Ltd.

Yasuyuki Hayashi

Takashi Yamamoto

Toshihiro Hayami

Kenichi Tomisaka

Masahiro Sasakura

Kazuya Ota

Provided is a substrate placing table () capable of reducing influences of external factors such as the temperature inside a chamber (). The substrate placing table () disposed in the chamber () in a plasma processing apparatus () includes an electrostatic chuck () and a cooling jacket (), and the electrostatic chuck () consists of an upper disk part () having an electrode () for electrostatic attraction incorporated therein, and a lower disk part () having a greater diameter than the upper disk part () and having a heater () incorporated therein. A focus ring () disposed outside the upper disk part () in a radial direction of the upper disk part () and covering an upper surface of the lower disk part (), an upper annular cover () for thermal insulation enclosing the lower disk part () and at least a part of the cooling jacket (), and a lower annular cover () for thermal insulation clamping the cooling jacket () between itself and the upper annular cover () are made of ceramics.

Substrate placing table, plasma processing apparatus provided with same, and plasma processing method

A plasma processing device capable of positioning a protective member for covering the upper surface of a peripheral edge portion of a substrate, with high accuracy. A plasma processing device has, a platen on which a substrate K is placed, a gas supply device, a plasma generating device, an RF power supply unit, an annular and plate-shaped protective member configured to be capable of being placed on a peripheral portion of the platen and which covers a peripheral edge portion of the substrate K, support members supporting the protective member, and a lifting cylinder lifting up and down the platen. At least three first protrusions which are engaged with the peripheral portion of the platen are formed on a pitch circle on the lower surface of the protective member and the center of the pitch circle is co-axial with the central axis of the protective member.

Etching device, plasma processing device

The present invention relates to a plasma processing apparatus in which it is possible to efficiently perform maintenance of a processing chamber. A plasma processing apparatus has a processing chamber including a lower chamber and an upper chamber, a platen on which a silicon substrate is placed, a processing gas supply device, coils, high-frequency power supply unit for coil, an elevating board with a through hole provided to be vertically movable, an elevating mechanism for supporting and moving the elevating board, and a fixing mechanism for fixing the upper chamber. The fixing member is configured from a fixing board, first fixing bolts for connecting and fixing a top plate to the elevating board using the fixing board, second fixing bolts for fixing a flange portion of a holding member to an annular plate, and third fixing bolts for fixing the annular plate to a sidewall of the lower chamber.

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Hyogo, Japan

Yasuyuki Hayashi