Tokyo Electron Limited

Fujitsu Corporation

Adv Antest Corporation

Yasutoshi Umehara

Kazuyuki Ozaki

Yoshiro Goto

Soichi Hama

Akira Fujii

Yoshiaki Ogiso

Yoko Sato

Tsuyoshi Moriya

Shuji Iwanaga

Michiko Nakaya

Shinichi Wakana

Motoi Okada

Yuki Kataoka

A film thickness measuring system measures thicknesses of first films of respective first substrates by spectroscopy, captures first image data of surfaces of second substrates each having a second film to acquire first color information of the surfaces of the second substrates, and calculates a correlation between a thickness of the second film and color information of the surface of the second substrate by using the measured thickness of the first films and the first color information. When estimating a thickness of a third film of a third substrate, the film thickness measuring system acquire second color information of the surface of the third substrate by using captured image data of the third substrate, and estimates a thickness of the third film in the second region, by using the calculated correlation and the second color information.

Film thickness measuring system and film thickness measuring method

A film thickness measurement device according to one aspect of the present disclosure includes: a first computing unit configured to, for each location on a first wafer having a known thickness other than a reference location on the first wafer, calculate a relative reflectance of a reflection spectral signal of reflected light detected by a collection probe, with respect to a reference reflection spectral signal of reflected light detected by the collection probe at the reference location on the first wafer; a specifying unit configured to specify a relationship between the relative reflectance calculated by the first computing unit and distance data representing a distance between the location on the first wafer and the collection probe; a second computing unit configured to calculate relative reflectances each corresponding to distance data representing a distance between the collection probe and a corresponding location on a second wafer to be measured, based on the relationship specified by the specifying unit; and a correction unit configured to, in calculating film thickness at each location on the second wafer, correct the reference reflection spectral signal based on the relative reflectances calculated by the second computing unit.

Film thickness measurement device and correction method

Provide is a process monitoring device in a semiconductor manufacturing apparatus that can readily and reliably monitor the process in the semiconductor manufacturing apparatus. The process monitoring device includes a storage unit that stores a normal state moving image data indicating a normal state of the process; an image capturing unit that captures an image of a state of the process to be monitored to acquire a moving image data; an abnormality level calculation unit configured to extract a feature amount for each frame of the moving image data and the normal state moving image data, and calculate an abnormality level based on the extracted feature amount; and a display unit that displays the abnormality level calculated by the abnormality level calculation unit in association with a frame position of the moving image data.

Process monitoring device and process monitoring method in semiconductor manufacturing apparatus and semiconductor manufacturing apparatus

Disclosed is an abnormality detection system that accurately detects abnormalities that arise in a device. The abnormality detection system, which detects abnormalities that arise in a plasma processing device, is provided with: a plurality of ultrasonic sensors, which detects acoustic emissions (AE), which cause abnormalities to arise; a distributor, which distributes each output signal from the ultrasonic sensorsinto a first signal and a second signal; a trigger, which samples the first signal at, for example, 10 kHz, and generates a trigger signal when predetermined characteristics are detected; a trigger generation time counter, which receives trigger signals and determines the time of trigger generation; a data logger board, which creates sampling data from sampling the second signal at, for example, 1 MHz; and a PC, which analyzes abnormalities arising in the plasma processing deviceby means of performing a waveform analysis of data from the sampling data, said data corresponding to a set time period using the time of trigger generation determined by the trigger generation time counteras a benchmark.

Abnormality detection system, abnormality detection method, recording medium, and substrate processing apparatus

A voltage and displacement sensitive probe with an electro-optic crystal, electrically conductive transparent films and adhered to a pair of parallel surfaces on the electro-optic crystal, a transparent elastic film which circumferential portion is bonded to the frame and which is symmetric with respect to any plane through the axis thereof, a probing needle bonded at its reflective bottom surface to the central portion on the film, a holder for holding the electro-optic crystal and the transparent elastic film via frame concentrically, a lead for grounding, and electrically conductive films for connecting between the films. Displacement detection of the probing needle is based upon the change in the length of the path of the light travelling through the electro-optic crystal being reflected by the surface and travelling in reverse direction. Voltage detection of the probing needle is based upon the phase difference between the two linearly-polarized light components.

Voltage and displacement measuring apparatus and probe

In a signal measuring apparatus a distance between a sample and a probe is adjusted, a voltage is applied through the sample and the probe and a signal is measured using a current flowing through the sample and the probe. That is, a current flowing through the sample and the probe is chopped by a laser beam at a prescribed frequency and is fetched into a sampling apparatus to generate a sample value of the current. The sample value is compared with a current setting value arbitrarily set in a comparator, and a reference voltage is generated according to a compared result in a control logic circuit and a D/A converter. The reference voltage is fed back to the sampling apparatus to converge the current flowing through the sample and the probe at the current setting value. Therefore, a signal of the sample is measured according to the reference voltage on condition that the current is converged at the current setting value.

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Tokyo, Japan

Yasutoshi Umehara