Fujimi Incorporated

Yasuto Ishida

Tsutomu Yoshino

Shogo Onishi

Satoru Yarita

Yukinobu Yoshizaki

Ayano Yamazaki

Tomohiko Akatsuka

Hisanori Tansho

Tatsuhiko Hirano

Hirofumi Ikawa

Ryota Mae

Yoshihiro Kachi

Kanako Fukuda

The present invention provides a unit that can sufficiently remove a residue containing inorganic oxide abrasive grains present on the surface of a polished object to be polished containing silicon oxide. One aspect of the present invention relates to a surface treatment method for reducing a residue containing inorganic oxide abrasive grains on a surface of a polished object to be polished containing silicon oxide using a composition for surface treatment, wherein the composition for surface treatment contains a zeta potential adjusting agent having an sp value of more than 9 and 11 or less and having a negatively charged functional group and a dispersing medium, and the surface treatment method includes negatively controlling a zeta potential of the silicon oxide and controlling a zeta potential of the inorganic oxide abrasive grains to −30 mV or less using the surface treatment composition.

Surface treatment method, method for producing semiconductor substrate including the surface treatment method, composition for surface treatment, and system for producing semiconductor substrate including the composition for surface treatment

The present invention provides a means capable of sufficiently removing a residue containing inorganic oxide abrasive grains present on the surface of a polished object to be polished containing silicon nitride. One aspect of the present invention relates to a surface treatment method for reducing a residue containing inorganic oxide abrasive grains on a surface of a polished object to be polished containing silicon nitride using a composition for surface treatment, wherein the composition for surface treatment contains a zeta potential adjusting agent having a negatively charged functional group and having a viscosity of an aqueous solution having a concentration of 20% by mass at 25° C. of 10 mPa·s or more and a dispersing medium, and the surface treatment method includes controlling a zeta potential of the silicon nitride and a zeta potential of the inorganic oxide abrasive grains each to −30 mV or less using the composition for surface treatment.

An object of the present invention is to provide a new polishing composition that contributes to improving the quality of a device. There is provided a polishing composition containing: an abrasive grain having an organic acid immobilized on a surface thereof; a first water-soluble polymer having a sulfonic acid group or a group having a salt thereof, or a carboxyl group or a group having a salt thereof; a second water-soluble polymer different from the first water-soluble polymer; a nonionic surfactant; and an aqueous carrier, wherein the polishing composition is used for polishing an object to be polished.

Polishing composition

An intermediate raw material according to the present invention includes a charge control agent having a critical packing parameter of 0.6 or more and a dispersing medium and a pH of the intermediate raw material is less than 7.

Intermediate raw material, and polishing composition and composition for surface treatment using the same

To provide a means capable of sufficiently removing organic residues present on the surface of a polishing object after polishing containing silicon oxide or polysilicon. A surface treatment composition contains a polymer having a constituent unit represented by Formula (1) below and water and is used for treating the surface of a polishing object after polishing, 

Surface treatment composition, method for producing surface treatment composition, surface treatment method, and method for producing semiconductor substrate

The purpose of the present invention is to provide means for sufficiently removing residues on a surface of an object which has been polished including silicon nitride, silicon oxide, or polysilicon. Provided is a composition for surface treatment including an anionic surfactant having a molecular weight of 1,000 or less and water, the composition having a pH of less than 7, wherein a ratio of a molecular weight of a hydrophilic moiety to a molecular weight of a hydrophobic moiety (the molecular weight of the hydrophilic moiety/the molecular weight of the hydrophobic moiety) of the anionic surfactant is 0.4 or more (in which the hydrophobic moiety is a hydrocarbon group having 4 or more carbon atoms and the hydrophilic moiety is a part excluding the hydrophobic moiety and a counterion), and the composition for surface treatment is used for surface treatment of an object which has been polished including at least one selected from the group consisting of silicon nitride, silicon oxide, and polysilicon.

Composition for surface treatment and method of producing the same, surface treatment method, and method of producing semiconductor substrate

A composition for surface treatment according to the present invention is used for treating the surface of an object to be polished after polishing, the composition for surface treatment including: a water-soluble polymer having a constituent unit derived from glycerin; an acid; and water, wherein the composition for surface treatment has a pH of 5 or lower.

Composition for surface treatment, method for producing composition for surface treatment, surface treatment method, and method for producing semiconductor substrate

An objective of the present invention is to provide a means for sufficiently removing residues remaining on a surface of a polished object to be polished. A composition for surface treatment containing a polymer compound having at least one ionic functional group selected from the group consisting of a sulfonic acid (salt) group, a phosphoric acid (salt) group, a phosphoric acid (salt) group, and an amino group, and water, in which pH is less than 7, and the polymer compound has a pKa of 3 or less and an ionic functional group density of more than 10%.

Composition for surface treatment, method for producing the same, surface treatment method using composition for surface treatment, and method for producing semiconductor substrate

The present invention relates to a composition for surface treatment including: a phosphonic acid compound containing two or more nitrogen atoms; and water, wherein the pH is 6 or less, and the composition for surface treatment is used for treating a surface of a polishing-completed object to be polished having a tungsten-containing layer. According to the present invention, there is provided a means capable of inhibiting dissolution of the tungsten-containing layer provided on a polishing-completed object to be polished when a surface treatment is performed.

Composition for surface treatment and surface treatment method using the same

The present invention provides a means for sufficiently removing organic residues remaining on the surface of an object to be polished which contains silicon nitride, silicon oxide, or polysilicon and has been polished. The present invention relates to a surface treatment composition including a polymer compound having a sulfonic acid (salt) group and water, wherein the surface treatment composition has a pH value of less than 7 and the surface treatment composition is used for decreasing an organic residue on a surface of an object to be polished which contains silicon nitride, silicon oxide, or polysilicon and has been polished.

Surface treatment composition, method of producing surface treatment composition, method of treating surface, and method of producing semiconductor substrate

The present invention is to provide a means with which foreign matters remaining on a surface of a polished object to be polished can be sufficiently removed. The present invention relates to a composition for surface treatment for a polished object to be polished, including: a (co)polymer containing a structural unit A having a phosphonic acid group and a divalent (poly)oxyhydrocarbon group or a salt thereof; and water, wherein a content of the structural units A exceeds 50% by mole relative to the total structural units forming the (co)polymer.

Composition for surface treatment, and method for surface treatment using the same

A surface treatment composition according to the present invention is a surface treatment composition having a pH of lower than 7 and used for treating the surface of a polished object to be polished having a layer containing tungsten, and the surface treatment composition contains a tungsten etching inhibitor and water, wherein the tungsten etching inhibitor is a compound containing a monocyclic or fused polycyclic aromatic hydrocarbon ring having two or more substituents, and the substituents contain at least a nitrogen-containing group and an anionic group.

The composition for surface treatment according to the present invention includes a carboxylic acid compound having two or more nitrogen atoms, an ionic dispersing agent, and water, has a pH of less than 6, and is used for treating a surface of a polished object having a tungsten-containing layer.

Composition for surface treatment and method for surface treatment using the same

There are provided a polishing composition and a method for polishing capable of, when a substrate including polysilicon is polished, limiting the polishing rate of the polysilicon, and selectively polishing a silicon compound other than the polysilicon, such as silicon nitride. The polishing composition used includes abrasives, an organic acid and a conjugate base of the organic acid.

Polishing composition and polishing method

[Problem] Provided is a polishing composition which is suitable for polishing a polishing object having a metal wiring layer and capable of diminishing the step defect while maintaining a high polishing rate. [Solution] Provided is a polishing composition used in polishing a polishing object having a metal wiring layer, which contains a metal corrosion inhibitor, a complexing agent, a surfactant, and water and in which the solid surface energy of the polishing object surface after polishing the polishing object using the polishing composition is 30 mN/m or less, and the surfactant is preferably an anionic surfactant.

Growing community of inventors

Aichi, Japan

Yasuto Ishida