Hitachi Chemical Company, Ltd.

Yasushi Kurata

Masato Yoshida

Toranosuke Ashizawa

Jun Matsuzawa

Hiroki Terazaki

Kiyohito Tanno

Yuuto Ootuki

Kazuhiro Enomoto

Kazuhisa Kurashige

Yasuo Kamigata

Kouji Haga

Naoaki Shimura

Tatsuya Usui

Yuto Ootsuki

Masato Fukasawa

Naoyuki Koyama

Takeshi Uchida

Hiroyuki Ishibashi

Chiaki Yamagishi

Hiroki Terasaki

Akiko Igarashi

Hiroshi Ono

Katsuyuki Masuda

Toshihiko Akahori

Keizo Hirai

Miho Kurihara

Keiji Watanabe

Takashi Hattori

Hirotaka Hamamura

Takeshi Nojiri

Masatoshi Morishita

Mieko Matsumura

Toshiaki Akutsu

Tetsuya Hoshino

Tooru Tanaka

Yoshio Honma

Shuichiro Adachi

Sou Anzai

Akihiro Orita

Yuuto Ootsuki

Tsuyoshi Hayasaka

Masato Hitachi Chemical Co Ltd Yoshida

Hiroki Teresaki

Jun Hitachi Chemical Co Ltd Matsuzawa

A composition for forming a passivation layer, comprising a compound represented by Formula (I): M(OR). In Formula (I), M comprises at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each Rindependently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.

Composition for forming passivation layer, semiconductor substrate having passivation layer, method of producing semiconductor substrate having passivation layer, photovoltaic cell element, method of producing photovoltaic cell element and photovoltaic cell

The present invention relates to a CMP polishing slurry comprising cerium oxide particles, a dispersant, a water-soluble polymer and water, wherein the water-soluble polymer is a polymer obtained in polymerization of a monomer containing at least one of a carboxylic acid having an unsaturated double bond and the salt thereof by using at least one of a cationic azo compound and the salt thereof as a polymerization initiator. The present invention provides a polishing slurry and a polishing method allowing polishing efficiently uniformly at high speed without scratch and also allowing easy process management in the CMP technology of smoothening an interlayer dielectric film, BPSG film, and insulation film for shallow trench isolation.

Cmp polishing slurry and method of polishing substrate

The scintillator single crystal of the invention comprises a cerium-activated orthosilicate compound represented by the following general formula (1). The scintillator single crystal of the invention exhibits improved scintillation properties by reduced segregation between elements in the crystal ingot.LmLnLuCeSiO&#x2003;&#x2003;(1)(Wherein Lm represents at least one element selected from among Sc and Y and lanthanoid elements with lower atomic numbers than Lu, Ln represents at least one element selected from among Sc, Y, B, Al, Ga and In and lanthanoid elements with ion radii intermediate between Lm and Lu, x represents a value of greater than zero and no greater than 0.5, y represents a value of greater than 1 and less than 2, and z represents a value of greater than zero and no greater than 0.1.).

Scintillator single crystal, heat treatment method for production of scintillator single crystal, and method for production of scintillator single crystal

A single crystal heat treatment method having a step of heating a single crystal of a specific cerium-doped silicate compound in an oxygen-poor atmosphere at a temperature T(units: &#xb0; C.) that satisfies the conditions represented by formula (3) below800&#x2266;&#x3c;(&#x2212;550)&#x2003;&#x2003;(3)

Single crystal heat treatment method

A polishing slurry including an oxidant, a metal oxide dissolver, a metal inhibitor and water and having a pH from 2 to 5. The polishing slurry having a high metal-polishing rate, reducing etching rate and polishing friction, results in the production, with high productivity, of semiconductor devices reduced in dishing and erosion in metal wiring.

Polishing slurry and polishing method

To polish polishing target surfaces of SiOinsulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cmand ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor which make use of this abrasive.

Abrasive, method of polishing target member and process for producing semiconductor device

The present invention is directed to a CMP polishing slurry comprising cerium oxide particles, an organic compound having an acetylene bond (triple bond between carbon and carbon) and water, and a method for polishing a substrate which comprises a step of polishing a film to be polished of the substrate with the polishing slurry. In a CMP (chemical mechanical polishing) technique for flattening inter layer dielectrics, insulating films for shallow trench isolation and the like in a manufacturing process of semiconductor devices, the present invention enables the effective and high-speed polishing.

Polishing slurry for chemical mechanical polishing and method for polishing substrate

The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and &#x3b1;-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefore easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.

CMP polishing slurry and polishing method

To polish polishing target surfaces of SiOinsulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cmand ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m./g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600&#xb0; C. to 900&#xb0; C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

Cerium oxide abrasive and method of polishing substrates

The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and &#x3b1;-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.

CMP polishing compound and polishing method

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Hitachi, Japan

Yasushi Kurata