Canon Anelva Corporation

Yasushi Kamiya

Einstein Noel Abarra

Yuta Konno

Hiroshi Akasaka

Masayoshi Ikeda

Takashi Nakagawa

Yasushi Miura

Ryo Hattori

Tomoki Oku

Yoshimitsu Kodaira

Yukito Nakagawa

Naoyuki Suzuki

Shuji Nomura

Tomohiko Toyosato

Yasuyuki Taneda

Kiyotaka Sakamoto

Kazuhiro Kimura

Masahiro Totuka

Eiji Fujiyama

Hitoshi Morisaki

A computer-readable recording medium encoded with a computer program for executing an ion etching method of etching a substrate arranged on a substrate holder using an ion beam etching apparatus. The computer program includes a decremental control program having a command according to which the first step is executed; and an incremental control program having a command according to which the second step is executed.

Apparatus and method for processing substrate using ion beam

To provide an ion beam etching method which enables a highly uniform IBE process even under a low-angle-incident static condition, without increase in the size of an apparatus. The ion beam etching method includes: changing a position of an opening portion with respect to a substrate; etching the substrate with an ion beam passing through the opening portion; and reducing a tilt angle as a center of a site where the ion beam is incident on the substrate moves away from the ion source.

Ion beam etching method and ion beam etching apparatus

An ion beam etching method includes applying a positive voltage for extracting ions into a vacuum container to a first electrode, under a first condition where irradiation of a substrate with an ion beam is blocked off by a shutter, generating plasma in an internal space under the first condition, forming the ion beam by forming, under the first condition, a second condition where a positive voltage is applied to the first electrode and a negative voltage is applied to a second electrode, and moving the shutter and processing the substrate by irradiating the substrate with the ion beam.

Ion beam processing method and ion beam processing apparatus

An object of the present invention is to provide a method which enable a material to be fully embedded into a recess portion with a deposition film left in the recess portion. A method in one embodiment comprises: a first irradiation step of irradiating a deposition film formed on an opening portion of a recess portion in a substrate with a particle beam in a direction at a first angle with respect to a substrate in-plane direction, to remove part of the deposition film in a thickness direction; and a second irradiation step of, after the first irradiation step, irradiating the deposition film with the particle beam in a direction at a second angle which is closer to perpendicular to the substrate in-plane direction than the first angle is, to remove part of the remaining deposition film in the thickness direction.

Substrate processing method and method of manufacturing semiconductor device

The invention provides: an ion beam generator and an ion beam plasma processing apparatus including a movable member (for example, a plug) which is capable of reducing formation of an adhering film on a sidewall of the member even when an electrode included in a grid assembly is sputtered. The ion beam generator of an aspect of the invention includes: a grid assembly provided opposed to an upper wall; a plug movable in a first direction from the upper wall toward the grid assembly and in a second direction from the grid assembly toward the upper wall; and a shield configured to shield a sidewall of the plug.

Ion beam generator and ion beam plasma processing apparatus

A method of processing a substrate in an apparatus including a substrate holder which holds the substrate, an ion source which emits an ion beam, a neutralizer which emits electrons, and a shutter which is arranged between a space in which the ion source and the neutralizer are arranged and a space in which the substrate holder is arranged, and configured to shield the ion beam traveling toward the substrate, includes adjusting an amount of electrons which are emitted by the neutralizer and reach the substrate holder during movement of the shutter.

In fin FET fabrication, side walls of a semiconductor fin formed on a substrate have certain roughness. Using such fins having roughness may induce variations in characteristics between transistors due to their shapes or the like. An object of the present invention is to provide a fin FET fabrication method capable of improving device characteristic by easily reducing the roughness of the side walls of fins after formation. In one embodiment of the present invention, side walls of a semiconductor fin are etched by an ion beam extracted from a grid to reduce the roughness of the side walls.

Method of fabricating fin FET and method of fabricating device

[Objection of the invention]An ion beam generator, a thermal distortion in a grid assembly is reduced. [Structure to solve the objection]Thermal expansion coefficients &#x3b1;, &#x3b1;and &#x3b1;, for a sidewall (A) of a discharge chamber, mounting platform () and extraction grid electrode assembly () are selected to have a relation: &#x3b1;&#x3e;&#x3b1;&#x2267;&#x3b1;. For example, the material of discharge chamber sidewall is stainless steel o aluminum, the material of grids is Mo, W or C and the material of platform is Ti or Mo.

Ion beam generator

The silicon nitride film forming method deposits a silicon nitride film on the substrate surface by maintaining the heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from the gas supply system.

Growing community of inventors

Fuchu, Japan

Yasushi Kamiya