Tokyo Electron Limited

Other

Yasushi Aiba

Takanobu Hotta

Koji Maekawa

Kenji Suzuki

Kensaku Narushima

Masahito Sugiura

Masayuki Moroi

Tatsuya Handa

Hajime Yamanaka

Tomohisa Maruyama

Yukio Koike

Yasutaka Mizoguchi

Morio Kajiyama

Sakae Nakatsuka

There is provided a method for forming a metal film on a target substrate having a complex-shaped portion and a flat portion, the target substrate being loaded into a chamber which is maintained under a depressurized atmosphere, by sequentially supplying a metal chloride gas as a raw material gas and a reduction gas for reducing a metal chloride into the chamber while purging the chamber in the course of sequentially supplying the metal chloride gas and the reduction gas, the method including: forming a first metal film by supplying the metal chloride gas at a relatively low flow rate; and forming a second metal film by supply the metal chloride gas at a relatively high flow rate.

Method of forming metal film

There is provided a method of reducing stress in a metal film that is highly stressed, the method including: processing the metal film by supplying a metal chloride gas containing a metal of the metal film and a reduction gas for reducing the metal chloride gas onto the metal film; and forming a process film on the metal film to reduce stress in the metal film.

Method of reducing stress in metal film and metal film forming method

A gas supply mechanism of supplying a raw material gas obtained from a raw material of a solid state or a liquid state into a chamber configured to perform a film forming process on a workpiece is disclosed. The gas supply mechanism includes a gas supply controller configured to control a flow rate of a carrier gas by means of a flow rate controller, and to enable the carrier gas to flow while closing a material gas supply/shut-off valve to thereby increase internal pressures of a raw material container and a raw material gas supply pipe to be a high-pressure condition and then control the raw material gas supply/shut-off valve to be opened.

Gas supply mechanism, gas supplying method, film forming apparatus and film forming method using the same

A tungsten film forming method for forming a tungsten film on a surface of a target substrate by an ALD (atomic layer deposition) method comprises adding a reduction gas to allow an ALD reaction to mainly occur when a tungsten chloride gas is supplied. In the ALD method, the tungsten chloride gas as a tungsten source gas and the reduction gas for reducing the tungsten chloride gas are alternately supplied into a chamber which accommodates the target substrate and is maintained under a depressurized atmosphere, with a purge process for purging an inside of the chamber performed between the supply of the tungsten chloride gas and the supply of the reduction gas.

Tungsten film forming method

A tungsten film forming method includes: supplying a tungsten chloride gas as a source material of tungsten and a reducing gas towards a substrate to be processed under a depressurized atmosphere to cause reaction between the tungsten chloride gas and the reducing gas while heating the substrate to be processed, such that a main tungsten film is directly formed on a surface of the substrate to be processed without forming an initial tungsten film for nucleus generation.

Tungsten film forming method, semiconductor device manufacturing method, and storage medium

In a tungsten film forming method, a substrate having a recess is provided in a processing chamber, and a first tungsten film is formed on the substrate to fill the recess with a tungsten by simultaneously or alternately supplying WClgas as a tungsten source and a reducing gas under a depressurized atmosphere of the processing chamber, and by reacting the WClgas with the reducing gas while heating the substrate. Then, an opening is formed in the tungsten filled in the recess by supplying WClgas into the processing chamber and etching an upper portion of the tungsten. Thereafter, a second tungsten film is formed on the substrate having the opening by simultaneously or alternately supplying the WClgas and the reducing gas into the processing chamber, and by reacting the WClgas with the reducing gas while heating the substrate.

A tungsten film with a lower specific resistance and a lower fluorine concentration over its boundary with the base barrier layer, which adheres to the barrier layer with a high level of reliability, compared to tungsten films formed through methods in the related art, is formed. The tungsten film is formed through a process in which a silicon-containing gas is delivered to a wafer M placed within a processing containerand a process executed after the silicon-containing gas supply process, in which a first tungsten filmis formed by alternately executing multiple times, a tungsten-containing gas supply step for supplying a tungsten-containing gas and a hydrogen compound gas supply step for supplying a hydrogen compound gas with no silicon content with a purge step in which an inert gas is supplied into the processing container and/or an evacuation step for evacuating the processing container executed between the tungsten-containing gas supply step and the hydrogen compound gas supply step.

Method for forming tungsten film at a surface of a processing target material, film-forming apparatus, storage medium and semiconductor device with a tungsten film

Film forming equipment () is provided with a treatment container (), a gas supplying system for supplying the container with a treatment gas including a film forming gas, and an exhaust system for exhausting the atmosphere in the container. In the treatment container, a placing table () having a placing plane for placing a flat board shaped body to be treated (W) is arranged. The body to be treated on the placing table is heated by a heater (). A clamping apparatus () is provided to abut/separate to and from a surface peripheral part of the body to be treated, so as to press/release the body to be treated on and from the placing table. On the placing plane of the placing table, a suction structure () having a recessed part () is formed for temporarily sucking the body to be treated by pressure difference, by forming a substantially hermetic space between the placing plane and the rear plane of the body to be treated.

Film forming equipment and film forming method

A wafer processing apparatus ( ) has a wafer processing vessel ( ). A wafer is mounted on a susceptor ( ) included in the wafer processing apparatus. Process gases are supplied to the wafer through a shower head ( ) disposed in an upper region within the processing vessel to carry out a predetermined process for processing the wafer. The surfaces of aluminum members ( ) employed in the wafer processing apparatus are subjected to an organic mechanical chemical polishing process, a blasting process and an aluminum oxide film forming process in that order. It is difficult for unnecessary films to adhere to the thus treated surfaces and it is difficult for unnecessary films deposited on the thus treated surfaces to come off the surfaces. Consequently, intervals between cleaning operations can be extended and production of particles can be suppressed.

Method of manufacturing a processing apparatus

A tungsten layer is formed on the surface of an object to be treated (e.g., a semiconductor wafer), supplying a process gas which includes a material gas of a tungsten fluoride (e.g., WF ) gas and a reducing gas (e.g., H gas) for reducing the material gas. In this case, an intermediate tungsten film forming step is carried out between a nuclear crystalline film forming step of forming a nuclear crystalline film of tungsten on the surface of the object and a main tungsten film forming step of forming a main tungsten film on the nuclear crystalline film. At the intermediate tungsten film forming step, an intermediate tungsten film is formed while the flow ratio of the material gas to the reducing gas is smaller than that at the main tungsten film forming step. Thus, the incubation time T after the deposition of the nuclear crystalline film is removed, so that it is possible to enhance the whole mean deposition rate and to improve the uniformity of the thickness between objects to be processed.

Growing community of inventors

Nirasaki, Japan

Yasushi Aiba