Hitachi-kokusai Electric Inc.

Yasuo Kunii

Yasuhiro Inokuchi

Atsushi Moriya

Masanori Sakai

Seiji Watanabe

Kazuyuki Toyoda

Kazuyuki Okuda

Taketoshi Sato

Nobuo Ishimaru

Toru Kagaya

Tadashi Kontani

Nobuhito Shima

Yasushi Yagi

Takaaki Noda

Makoto Sambu

Junichi Murota

Minoru Kogano

Disclosed is a hot wall type substrate processing apparatus, including a processing chamber which is to accommodate at least one product substrate therein; a heating member which is disposed outside of the processing chamber and which is to heat the product substrate; a processing gas supply system connected to the processing chamber; and an exhaust system, wherein with a member from which a Si film is exposed being disposed such as to be opposed to a surface on which selective growth is to be effected of the product substrate, an epitaxial film including Si is allowed to selectively grow on a Si surface of the product substrate.

Substrate processing apparatus and semiconductor device producing method

A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Substrate processing apparatus and reaction container

There are provided a substrate processing method and apparatus adapted to prevent deterioration of film thickness uniformity while maintaining the film forming rate. The substrate processing method comprises: (a) accommodating a plurality of substrates in a process chamber by carrying and stacking the substrates in the process chamber, (b) forming first amorphous silicon films to a predetermined thickness by heating at least the substrates and supplying first gas, and (c) forming second amorphous silicon films to a predetermined thickness by heating at least the substrates and supplying second gas different from the first gas. The first gas is higher order gas than the second gas.

Substrate processing method and substrate processing apparatus

This invention makes it possible to make even films composed of at least silicon and germanium with gradient germanium ratio along a film thickness direction thereof for a short deposition time. A temperature controllercontrols a heaterso that temperature of wafers W will be changed from low (e.g. 400&#xb0; C.) to high (e.g. 700&#xb0; C.) by alternately repeating temperature changing process to heat up the wafers W and temperature regulating process when temperature of the wafers W does not change as much as that of the temperature changing process for a specific amount of time. While a gas controllerprovides a reactive gas into a reaction tubeduring the temperature regulating process, it controls a valveto stop it during the temperature changing process.

Method of manufacturing a semiconductor device and a semiconductor manufacture system

A semiconductor device fabricating method includes the step of supplying BClas a doping gas, SiHas a film forming gas, and Has a carrier gas to a reaction chamber of a semiconductor device fabricating apparatus, wherein SiH, BCland Hflow in the reaction chamber on the condition that the film forming pressure ranges from about 0.1 to 100 Pa and the film forming temperature ranges from about 400 to 700&#xb0; C.

Method for fabricating a semiconductor device

An apparatus and a method for manufacturing a semiconductor device can provide a good quality film growth in a highly clean reaction atmosphere unaffected by contamination from a furnace opening portion. A reverse-diffusion preventing body is provided between a furnace opening flange and a boat susceptor so that a substrate processing space is isolated from a furnace opening portion space to thereby prevent reverse-diffusion of a contaminant which occurs at a furnace opening portion B, to the substrate processing space At a furnace opening flange a furnace opening exhausting tube is provided which constitutes a furnace opening system for exhausting the space independently of the space so that the space is exhausted while being purged by supplying a purge gas into the space to thereby remove a contaminant from the space A gas supplying nozzle which is introduced from the flange is extended from the space to the space so that a reaction gas is directly introduced into the space to thereby prevent a contaminant Within the space from being involved in the space

Substrate processing apparatus and method for manufacturing semiconductor device

Growing community of inventors

Tokyo, Japan

Yasuo Kunii