Tokyo Electron Limited

Other

Zeon Corporation

Tokyo Eectron Limited

Yasuo Kobayashi

Kohei Kawamura

Toshihisa Nozawa

Jun Ogawa

Noriaki Fukiage

Kunihiro Tada

Hideki Yoshikawa

Tadahiro Ohmi

Nobuo Ishii

Takaaki Matsuoka

Kiyotaka Ishibashi

Kaoru Maekawa

Akinobu Teramoto

Naohisa Goto

Hiroaki Ikegawa

Kentaro Oshimo

Makoto Ando

Hideomi Hane

Takeshi Oyama

Shimon Otsuki

Kotaro Miyatani

Takatoshi Kameshima

Tatsuya Sugimoto

Toshiro Yamada

Tamotsu Morimoto

Takayuki Karakawa

Yasuhiro Horiike

Kimiaki Tanaka

Kenichi Kubo

Masahiro Horigome

Hidetoshi Wakamatsu

Kenichi Nishizawa

Koji Koizumi

Takuya Kurotori

Junichi Takada

Yasuhiro Horike

Masao Yoshioka

There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.

Substrate processing method and substrate processing apparatus

A film forming apparatus is provided for forming a film by revolving a substrate placed on a rotary table in a vacuum container, alternately supplying a precursor gas and a reaction gas that reacts with the precursor gas to generate a reaction product multiple times, and depositing the reaction product on the substrate. The film forming apparatus comprises a precursor gas supply region that supplies the precursor gas onto the substrate, one or more plasma generation regions that generate plasma at a position apart from the precursor gas supply region in a rotational direction of the rotary table, and a cleaning region that cleans the rotary table by supplying a cleaning gas onto the rotary table in a region apart from the plasma generation regions and the precursor gas supply region in the rotational direction when a film forming process is not performed on the substrate.

Film forming apparatus, method of cleaning film forming apparatus, and storage medium

A film forming process of forming a silicon nitride film by depositing a molecular layer of silicon nitride on a surface of a substrate, in which an uneven pattern is formed and a base made of metal reacting with halogen is exposed, includes alternately performing adsorbing silicon halide to the surface of the substrate and nitriding the silicon halide, wherein the film forming process is performed under a condition in which the substrate is heated at a film-forming temperature, the film-forming temperature falling within a range of equal to or higher than a minimum film-forming temperature at which the molecular layer of the silicon nitride is formed by reaction of the silicon halide and a plasmarized nitriding gas and less than a maximum film-forming temperature at which the reaction of the base made of metal and the silicon halide goes ahead.

Film forming method, film forming apparatus, and storage medium

Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Placing bed structure, treating apparatus using the structure, and method for using the apparatus

A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step.

Surface treatment for a fluorocarbon film

The present invention provides a processing apparatus and a processing method, both of which can carry out a low-temperature process to allow active gas species to react with an oxide film on an object to be processed to form a product film and a heating process to heat the object to a predetermined temperature to evaporate the product film, in succession. This processing apparatusis provided with a shielding platecapable of entering a gap between the object W and a transparent windowand also withdrawing from the gap. On condition that the shielding plateis closed to cut off irradiation heat from the transparent windowthe product film is formed by allowing the active gas species of NFgas to react with a native oxide film on the object under the low-temperature condition. After that, upon closing the shielding platethe native oxide film is removed by applying heat irradiated from a heating lampto the product film through the transparent windowAdditionally, the apparatus includes a low-temperature processing chamberallowing NFgas to react with the native oxide film at a low temperature and a heating chamberfor heating the product film, independently.

Processing apparatus and processing method

A microwave is radiated into a processing chamber () from a planar antenna member of an antenna () through a dielectric plate (). With this, a CFgas supplied into the processing chamber () from a gas supply member () is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the CFgas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.

Plasma processing method and plasma processing apparatus

A film forming method is characterized in that the method is provided with a step of introducing a processing gas including inorganic silane gas into a processing chamber, in which a mounting table composed of ceramics including a metal oxide is arranged, and precoating an inner wall of the processing chamber including a surface of the mounting table with a silicon-containing nonmetal thin film; a step of mounting a substrate to be processed on the mounting table precoated with the nonmetal thin film; and a step of introducing a processing gas including organic silane gas into the processing chamber, and forming a silicon-containing nonmetal thin film on a surface of the substrate mounted on the mounting table.

Film forming method and film forming apparatus

A dielectric film () made of CF is deposited on a substrate. A protective layer comprising an SiCN film () is formed on the dielectric film (). A film () serving as a hardmask made of SiCO is deposited on the protective layer by a plasma containing active species of silicon, carbon, and oxygen. When the protective layer is formed, an SiC film () is deposited on the dielectric film () by a plasma containing active species of silicon and carbon, and thereafter the SiCN film () is deposited on the SiC film () by a plasma containing active species of silicon, carbon, and nitrogen.

Manufacturing method of semiconductor device and film deposition system

Disclosed are a substrate for electronic devices such as semiconductor devices and a method for processing the same, In the processing method, firstly a substrate for electronic devices is prepared and an insulating film (I) composed of a fluorocarbon (CF) is formed on the surface of the substrate. Then, fluorine (F) atoms exposed in the surface of the insulating film (I) are removed therefrom by bombarding the surface of the insulating film (I) with, for example, active species (KR) produced in a krypton (Kr) gas plasma. In this connection, the substrate is kept out of contact with moisture at least from immediately after the insulating film forming step until completion of the fluorine removing step.

Substrate for electronic device capable of suppressing fluorine atoms exposed at the surface of insulating film from reacting with water and method for processing same

The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420&#xb0; C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

Semiconductor device, method for manufacturing semiconductor device and gas for plasma CVD

In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a semiconductor device in which the relative permittivity of the High-K insulation film can be kept in a high state, a semiconductor device is disclosed that includes a silicon substrate, a gate electrode layer, and a gate insulation film between the silicon substrate and the gate electrode layer. The gate insulation film is a high relative permittivity (high-k) film being formed by performing a nitriding treatment on a mixture of a metal and silicon. The High-K film itself becomes a nitride so as to prevent SiOfrom being formed.

Semiconductor device and method for manufacturing the same

The present invention provides method and apparatus for surface treatment which, when employed in process steps of manufacturing semiconductor devices, can result in the final products having enhanced reliability. According to the surface processing method, an obeject to be processed W is introduced in a processing vessel, which is then supplied with ClFgas serving as cleaning gas from a supply unit. The ClFgas is bound to the surface of the object to be processed W, and although the supply of the gas to the processing vessel is interrupted, the ClFgas bound to the surface of the object to be processed W serves to clean the surface of the object to be processed. Next, reducing gas is introduced into the processing vessel W to remove chlorine from the object to be processed W, the chlorine being derived from the ClFgas. After that, the introduction of the reducing gas is interrupted, and the cleaned object to be processed W is exported from the processing vessel. In addition to that, a surface processing apparatusand other processing devices are arranged in a cluster device so that an object to be processed therein is transported among them from one to another under a vacuum environment.

Method and apparatus for surface treatment

The present invention provides method and apparatus for surface treatment which, when employed in process steps of manufacturing semiconductor devices, can result in the final products having enhanced reliability. According to the surface processing method, an object to be processed W is introduced in a processing vessel, which is then supplied with ClFgas serving as cleaning gas from a supply unit. The ClFgas is bound to the surface of the object to be processed W, and although the supply of the gas to the processing vessel is interrupted, the ClFgas bound to the surface of the object to be processed W serves to clean the surface of the object to be processed. Next, reducing gas is introduced into the processing vessel W to remove chlorine from the object to be processed W, the chlorine being derived from the ClFgas. After that, the introduction of the reducing gas is interrupted, and the cleaned object to be processed W is exported from the processing vessel. In addition to that, a surface processing apparatusand other processing devices are arranged in a cluster device so that an object to be processed therein is transported among them from one to another under a vacuum environment.

Growing community of inventors

Nirasaki, Japan

Yasuo Kobayashi