Hitachi-high-technologies Corporation

Hitachi, Ltd.

Canon Kabushiki Kaisha

Hitachi High-tech Corporation

Other

Adv Antest Corporation

Yasunari Sohda

Yoshinori Nakayama

Yasuhiro Someda

Muneyuki Fukuda

Hiroya Ohta

Hidetoshi Satoh

Hajime Kawano

Hiroyuki Ito

Masahide Okumura

Takeyoshi Ohashi

Noritsugu Takahashi

Osamu Kamimura

Makoto Sakakibara

Keiichiro Hitomi

Hiroyuki Itoh

Norio Saitou

Shinji Okazaki

Sayaka Tanimoto

Nobuhiro Okai

Hiromasa Yamanashi

Masato Muraki

Kaori Shirahata

Hideo Todokoro

Hideyuki Kazumi

Haruo Yoda

Souichi Katagiri

Yusuke Abe

Daisuke Bizen

Shoji Hotta

Hajime Koyanagi

Susumu Gotoh

Masaki Hosoda

Kaori Bizen

Tasuku Yano

Masahiko Ogino

Osamu Komuro

Kenji Tanimoto

Takafumi Miwa

Susumu Goto

Masaki Takakuwa

Junichi Tanaka

Hiroyuki Shinada

Shinichi Hashimoto

Hiroki Kawada

Takashi Doi

Koichi Hamada

Akira Ikegami

Makoto Ezumi

Naomasa Suzuki

Hiroshi Tsuji

Kunio Harada

Akihiro Miyauchi

Shinichi Kato

Takashi Ando

Yuko Sasaki

Momoyo Enyama

Shinichi Hamaguchi

Tatsuya Maeda

Tomonori Nakano

Taku Ninomiya

Zhaohui Cheng

Atsuko Yamaguchi

Yoshikiyo Yui

Susumu Komoriya

Ritsuo Fukaya

Tomoyasu Shojo

Osamu Nasu

Megumi Kimura

Katsunori Onuki

Wataru Mori

Yasunori Goto

Chiseki Haginoya

Zhigang Wang

Yuta Kawamoto

Genya Matsuoka

Soichiro Matsunaga

Takashi Matsuzaka

Wei Sun

Kotoko Urano

Katsuhiro Kawasaki

Atsuko Shintani

Hikaru Koyama

Noriyuki Tanaka

Tadashi Kanosue

Shin'ichi Hashimoto

To implement a calibration sample by which an incident angle can be measured with high accuracy, an electron beam adjustment method, and an electron beam apparatus using the calibration sample. To adjust an electron beam using a calibration sample, the calibration sample includes a silicon single crystal substratewhose upper surface is a {110} plane, a first recess structureopening in the upper surface and extending in a first direction, and a second recess structureopening in the upper surface and extending in a second direction intersecting the first direction, in which the first recess structure and the second recess structure each include a first side surface and a first bottom surface that intersects the first side surface, and a second side surface and a second bottom surface that intersects the second side surface, the first side surface and the second side surface are {111} planes, and the first bottom surface and the second bottom surface are crystal planes different from the {110} planes.

Calibration sample, electron beam adjustment method and electron beam apparatus using same

An inspection device includes a charged particle optical system that includes a charged particle beam source emitting a charged particle beam and plural lenses focusing the charged particle beam on a sample, a detector that detects secondary charged particles emitted by an interaction of the charged particle beam and the sample, and a calculation unit that executes auto-focusing at a time a field of view of the charged particle optical system moves over plural inspection spots, the calculation unit irradiates the charged particle beam to the sample under an optical condition that is obtained by introducing astigmatism of a predetermined specification to an optical condition that is for observing a pattern by the charged particle optical system, and executes the auto-focusing using an image formed from a signal outputted by the detector in detecting the secondary charged particles.

Inspection device

Provided is a scanning electron microscope which can perform high-speed focus correction even when an electron beam having high energy is used. The scanning electron microscope includes an electron optical system including an electron sourcethat emits an electron beam and an objective lens, a sample stagewhich is disposed on a stageand on which a sampleis placed, a backscattered electron detectorwhich is disposed between the objective lens and the sample stage and is configured to detect backscattered electronsemitted due to interaction between the electron beam and the sample, a backscattered electron detection system control unitwhich is provided corresponding to the backscattered electron detector and is configured to apply a voltage to the backscattered electron detector, and a device control calculation device. The objective lens has an opening in a stage direction, and the device control calculation device performs focus correction of the electron beam by controlling the voltage applied to the backscattered electron detector from the backscattered electron detection system control unit.

Scanning electron microscope

In order to provide an electron gun capable of maintaining a small spot diameter of a beam converged on a sample even when a probe current applied to the sample is increased, a magnetic field generation sourceis provided with respect to an electron gun including: an electron source; an extraction electrodeconfigured to extract electrons from the electron source; an acceleration electrodeconfigured to accelerate the electrons extracted from the electron source; and a first coiland a first magnetic pathhaving an opening on an electron source side, the first coiland the first magnetic pathforming a control lens configured to converge an electron beam emitted from the acceleration electrode. The magnetic field generation source is provided for canceling a magnetic field, at an installation position of the electron source, generated by the first coiland the first magnetic path

Electron gun and electron beam application device

The present invention provides an electron beam device suitable for observing the bottom of a deep groove or a deep hole with a high degree of accuracy under a large current condition. The electron beam device has: an electron optical system having an irradiation optical system to irradiate an aperturewith an electron beamemitted from an electron sourceand a reduction projection optical system to project and form an aperture image of the aperture on a sample; and a control unitto control a projection magnification of the aperture image of the aperture projected and formed on the sample and an aperture angleof the electron beam emitted to the sample by the electron optical system.

Electron beam device

A pattern measuring device ensures highly accurately measuring a depth and a three-dimensional shape irrespective of a formation accuracy of a deep trench and/or a deep hole. Therefore, in the present invention, the measuring system detects backscattered electrons from a pattern caused by an irradiation, compares backscattered electron signal intensities from a top surface, a bottom surface, and a sidewall of the pattern, and calculates a three-dimensional shape (or height information) of the sidewall based on a difference in heights of the top surface and the lower surface. The measuring system compares the calculated three-dimensional shape of the sidewall with a three-dimensional shape of the sidewall estimated based on an intensity distribution (open angle) of a primary electron beam, corrects the estimated three-dimensional shape of the sidewall based on a difference in the comparison, and corrects until the difference in the comparison becomes an acceptable value.

System and method for measuring patterns

There is provided a charged particle beam apparatus including: a charged particle source; a condenser lens and an object lens for converging a charged particle beam from the charged particle source and irradiating the converged charged particle beam to a specimen; and plural image shift deflectors for deflecting the charged particle beam. In the charged particle beam apparatus, the deflection of the charged particle beam is controlled using first control parameters that set the optical axis of a charged particle beam to a first optical axis that passes through the center of the object lens and enters a predefined position of the specimen, and second control parameters that transform the first control parameters so that the first control parameters set the optical axis of the charged particle beam to a second optical axis having a predefined incident angle different from the incident angle of the first optical axis.

Charged particle beam apparatus

An electron beam device suitable for observing the bottom of a deep groove or hole with a high degree of accuracy under a large current condition includes: an electron optical system having an irradiation optical system to irradiate a first aperture with an electron beam emitted from an electron source and a reduction projection optical system to project and form an aperture image of the first aperture on a sample, detectors to detect secondary electrons emitted by irradiating the sample with the electron beam through the electron optical system. An image processing unit generates a two-dimensional image from detection signals obtained by irradiating the sample while the electron beam scans the sample two-dimensionally by scanning deflectors of the electron optical system. Further, generates a reconstructed image by deconvoluting electron beam intensity distribution information of an ideal aperture image of the first aperture from the generated two-dimensional image information.

Electron beam device and sample inspection method

The present invention enlarges a range of movement of field of view by beam deflection with a simple deflector configuration and suppresses deterioration of a signal electron detection rate caused by the beam deflection. A scanning electron microscope according to the present invention is provided with a first deflection field setting module that sets plural deflectors to move a scanning area on a specimen by a primary electron beam to a position deviated from an axis extended from an electron source toward the center of an objective lens and a second deflection field setting module that sets the plural deflectors so that trajectories of signal electrons are corrected without changing the scanning area set by the first deflection field setting module. The control unit controls the plural deflectors by adding a setting value set by the second deflection field setting module to a setting value set by the first deflection field setting module.

In order to provide an aberration correction system that realizes a charged particle beam of which the anisotropy is reduced or eliminated on a sample surface even in the case where there is magnetic interference between pole stages of an aberration corrector, an correction system includes a line cross position control device () which controls a line cross position in the aberration corrector of the charged particle beam so that a designed value and an actually measured value of the line cross position are equal to each other, an image shift amount extraction device (), and a feedback determination device () which determines whether or not changing an excitation amount of the aberration corrector is necessary whether or not changing an excitation amount is necessary from an extracted image shift amount.

Aberration correction method, aberration correction system, and charged particle beam apparatus

A scanning electron microscope according to the present invention includes: an electron source that produces an electron beam; a trajectory dispersion unit that disperses the trajectory of an electron beam of electrons with a different energy value; a selection slit plate having a selection slit that selects the energy range of the dispersed electron beam; and a transmittance monitoring unit that monitors the transmittance of an electron beam, which is being transmitted through the selection slit. Accordingly, there can be provided a scanning electron microscope equipped with an energy filter that implements a stable reduction in energy distribution.

The scanning electron microscope includes: an electron source; a first deflector for deflecting a primary electron beam emitted from the electron source; a second deflector for focusing the primary electron beam deflected by the first deflector and deflecting a second electron from a sample, which is generated the focused primary electron beam, to the outside of the optical axis; a voltage applying unit for applying a negative voltage to the sample to decelerate the primary electron beam; a spectrometer for dispersing the secondary electron; a detector for detecting the secondary electron passing through the spectrometer; an electrostatic lens provided between the second deflector and the spectrometer; and a voltage control unit that controls the voltage applied to the electrostatic lens based on the negative voltage applied to the sample. The electrostatic lens allows the deflecting action to be overlapped with the converging action.

Scanning electron microscope and method for controlling same

A charged-particle-beam device used for measuring the dimensions, etc., of fine circuit patterns in a semiconductor manufacturing process, wherein corrections are made in the defocusing and astigmatism generated during changes in the operating conditions of a Wien filter acting as a deflector of secondary signals such as secondary electrons, and the display dimensions of obtained images are kept constant. In the charged-particle-beam device, the Wien filter () is arranged between a detector and a lens () arranged on the test-sample side among two stages of lenses for converging a charged-particle beam, and a computing device () is provided for the interlocked control of the Wien filter () and a lens () arranged on the charged-particle-source side among the two stages of lenses.

Charged-particle-beam device

In the present invention, a charged particle beam device has a charged particle source (), a first condenser lens () arranged downstream from the charged particle source (), an aperture () arranged downstream from the first condenser lens (), and a second condenser lens () arranged downstream from the aperture (), wherein, when a sample () is to be irradiated at a second charged particle beam amount which is greater than a first charged particle beam amount, the first and second condenser lenses are controlled such that a charged particle beam is formed downstream from the aperture (), and such that the focal point of the second condenser lens does not vary between the first charged particle beam amount and the second charged particle beam amount.

Charged particle beam device and detection method using said device

A scanning electron beam device having: a deflector () for deflecting an electron beam () emitted from an electron source (); an objective lens () for causing the electron beam to converge; a retarding electrode; a stage () for placing a wafer (); and a controller (); wherein the stage can be raised and lowered. In the low acceleration voltage region, the controller performs rough adjustment and fine adjustment of the focus in relation to the variation in the height of the wafer using electromagnetic focusing performed through excitation current adjustment of the objective lens. In the high acceleration voltage region, the controller performs rough adjustment of the focus in relation to the variation in the height of the wafer by mechanical focusing performed through raising and lowering of the stage, and performs fine adjustment by electrostatic focusing performed through adjustment of the retarding voltage. It thereby becomes possible to provide a scanning electron beam device that measures, in a highly accurate manner, both the upper part and the bottom part of a groove or a hole having a high aspect ratio.

Scanning electron beam device with focus adjustment based on acceleration voltage and dimension measurement method using same

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Kawasaki, Japan

Yasunari Sohda