Dai Nippon Printing Co., Ltd.

Yasuhisa Kitahata

Takashi Adachi

Nobuhito Toyama

Yasutaka Morikawa

Yuichi Inazuki

Takanori Sutou

A photomask which improves the imaging performance that the photomask has and forming a good micro image on a wafer in photolithography with a half pitch of 60 nm or less. Provided is a photomask used for photolithography using an ArF excimer laser as an exposing source for immersion exposure by quadrupole-polarized illumination with a high-NA lens. The photomask includes a mask pattern of a light shielding film or semi-transparent film on a transparent substrate, and further, given that a thickness of the light shielding film or semi-transparent film is 't' nm, a refractive index is 'n', an extinction factor is &#x201c;k&#x201d;, and a bias of a space part of the mask pattern is &#x201c;d&#x201d; nm, when &#x201c;t&#x201d;, &#x201c;d&#x201d;, &#x201c;n&#x201d; and &#x201c;k&#x201d; are adjusted and the photomask is used for the photolithography, optical image contrast takes a value exceeding 0.580.

Growing community of inventors

Tokyo-to, Japan

Yasuhisa Kitahata