Hitachi, Ltd.

Hitachi High-tech Corporation

Yasuhiro Shirasaki

Momoyo Enyama

Natsuki Tsuno

Makoto Sakakibara

Minami Shouji

Muneyuki Fukuda

Akira Ikegami

Yohei Nakamura

Satoshi Takada

Sayaka Kurata

Thantip Krasienapibal

Takashi Dobashi

Hajime Kawano

Hiroya Ohta

Daisuke Bizen

Michio Hatano

Takafumi Miwa

Minseok Park

Hirokazu Tamaki

Yuta Kawamoto

Kotoko Urano

Kaori Shirahata

Atsuko Shintani

Akiko Kagatsume

Takeshi Morimoto

A charged particle optical system scans a sample with a pulsed charged particle beam and detects secondary charged particles; and a scan image is formed. Control is carried out so that a deflection signal for deflecting the charged particle beam in a first direction, a first timing for pulsed irradiation, a second timing for pulsed irradiation, and a third timing for detection of the secondary charged particles are synchronized. When the deflection amount of the charged particle beam in the time period of the first timing corresponds to the coordinates of n pixels in the scan image, the same line is scanned m times (m<n) while shifting the first timing with respect to the deflection signal so that a location irradiated with the charged particle beam by each scanning has different pixel coordinates. The pixel values at pixel coordinates where a signal is defective are restored.

Charged particle beam device and sample observation method

A semiconductor inspection devicehaving a first measurement mode and a second measurement mode includes: an electron optical system configured to irradiate a sample with an electron beam; an optical system configured to irradiate the sample with light; an electron detector configured to detect a signal electron; a photodetectorconfigured to detect signal light; a control unitconfigured to control the electron optical system and the optical system such that an electron beam and light are emitted under a first irradiation condition in the first measurement mode, and to control the electron optical system and the optical system such that an electron beam and light are emitted under a second irradiation condition in the second measurement mode; and a computer configured to process a detection signal from the electron detector or the photodetector.

Semiconductor inspection device and method for inspecting semiconductor sample

A charged particle beam device includes a plurality of detectors configured to detect one or more signal charged particle beams caused by irradiation on a sample with one or more primary charged particle beams, and a control system. The control system is configured to measure an intensity distribution of the one or more signal charged particle beams detected by the plurality of detectors, and correct the intensity distribution by using a correction function. The control system is configured to generate an image based on the corrected intensity distribution.

Charged particle beam device

Provided is a projection electron beam application apparatus suitable for use in semiconductor manufacturing lines. An electron optical system of the electron beam application apparatus includes a mirror aberration correctordisposed perpendicular to an optical axis, a plurality of magnetic field sectorsby which an orbit of electrons is deviated from the optical axis to make the electrons incident on the mirror aberration corrector, and the orbit of the electrons emitted from the mirror aberration correctoris returned to the optical axis, and a doublet lensdisposed between adjacent magnetic field sectors along the orbit of the electrons. The plurality of magnetic field sectors have the same deflection angle for deflecting the orbit of the electrons, and the doublet lens is disposed such that an object plane and an image plane thereof are respectively central planes of the adjacent magnetic field sectors along the orbit of the electrons.

Electron beam application apparatus

A method of detecting a defect in a device using a charged particle beam includes inputting a charged particle beam condition, a light condition, and electronic device circuit information, controlling a charged particle beam applied to a sample based on the electron beam condition, controlling light applied to the sample based on the light condition, detecting second electrons emitted from the sample by the application of the charged particle beam and the light, and generating a calculation netlist based on the electronic device circuit information, generating a light irradiation netlist based on the calculation netlist and the light condition, estimating a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and comparing the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.

Device defect detection method using a charged particle beam

A measurement system comprising: a measurement apparatus observing a sample based on an observation condition including parameters; and an observation condition database storing data in which a search key related to the sample and the observation condition, a control unit calculating information on an observation condition of a sample is configured to: receive an observation condition search request including a search key related to a target sample; refer the observation condition database to search for the first data matching or similar to the search key related to the target sample included in the observation condition search request, calculate, based on the searched first data, a candidate observation condition of the measurement apparatus for observing the target sample, and output display data for presenting the candidate observation condition.

Measurement system and method for setting observation conditions of measurement apparatus

A charged particle beam device includes an input and output device that receives, as inputs, a charged particle beam condition, a light condition, and electronic device circuit information, a charged particle beam control system that controls a charged particle beam applied to a sample based on the electron beam condition, a light control system that controls light applied to the sample based on the light condition, a detector that detects second electrons emitted from the sample by the application of the charged particle beam and the light and outputs a detection signal, and a calculator that generates a calculation netlist based on the electronic device circuit information, generates a light irradiation netlist based on the calculation netlist and the light condition, estimates a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and compares the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.

An information processing system creates a teacher database configured to train an analysis model from an observation image and labeling information corresponding to the observation image using an information processor. This system includes a storage unit, an image processing unit, and a teacher database creating unit. The storage unit stores image processing data formed of information showing a relationship between an observation condition and a parameter relating to the observation image. Further stores a first observation image, a first observation condition, and first labeling information. The image processing unit accepts the first observation image and the first observation condition as inputs, performs image processing corresponding to the parameter to the first observation image based on the image processing data, and creates a second observation image corresponding to a second observation condition. The teacher database creating unit creates the teacher database from the second observation image and the first labeling information.

Information processing system and information processing method

A charged particle beam device according to the present invention changes a signal amount of emitted charged particles by irradiating the sample with light due to irradiation under a plurality of light irradiation conditions, and determines at least any one of a material of the sample or a shape of the sample according to the changed signal amount.

A charged particle beam application apparatus includes a beam separator. The beam separator includes a first magnetic pole, a second magnetic pole facing the first magnetic pole, a first electrode and a second electrode that extend along an optical axis of a primary beam and are arranged in a first direction perpendicular to the optical axis, on a first surface of the first magnetic pole which faces the second magnetic pole, and a third electrode and a fourth electrode that extend along the optical axis and face the first electrode and the second electrode, respectively, on a second surface of the second magnetic pole which faces the first magnetic pole.

Charged particle beam application apparatus

An image forming apparatus includes an observation image input section in which a plurality of observation images is input, an emphasis information input section that inputs information to be emphasized, a storage section that defines a plurality of conversion functions that converts the plurality of observation images into a converted image on the basis of a function for conversion and takes, as a parameter, a gradation value of each pixel in the plurality of observation images and a plurality of emphasis functions that takes, as a parameter, a gradation value of each pixel in the conversion functions, an image calculation section that calculates an image in which information to be emphasized is emphasized on the basis of the plurality of input observation images, the input information of the information to be emphasized, the conversion functions, and the emphasis functions, and an emphasized image output section that outputs the emphasized image.

Image forming apparatus

A charged particle beam device that detects a secondary charged particle beam generated by irradiation of a sample by a primary charged particle beam, includes: an image shift deflector that shifts an irradiation region for irradiation of the sample by the primary charged particle beam; a magnetic sector that separates the primary charged particle beam passing therein from the secondary charged particle beam from the sample using a magnetic field generated therein; a correction mechanism that is placed off of a trajectory of the primary charged particle beam but on a trajectory of the secondary charged particle beam inside the magnetic sector, the correction mechanism deflecting the secondary charged particle beam passing through; and a controller that controls the correction mechanism according to a defined relationship between a shift amount by the image shift deflector and a correction amount by the correction mechanism.

In this invention, information of material composition, process conditions and candidates of crystal structure either known or imported from material database is used to determine sample stage tilt angle and working distance (WD). Under these determined tilt angle and WD, the intensity of the electrons emitted at different angles and with different energies is measured using a scanning electron microscope (SEM) system comprising: a use of materials database containing materials composition, formation process, crystal structure and its electron yield; a sample stage that is able to move, rotate and tilt; an processing section for calculating optimum working distance for an observation from material database and measurement condition; means for acquiring an image of crystal information of a desired area of a sample based on an image obtained from SEM observation.

Scanning electron microscope and image processing apparatus

A charged particle detector including a scintillator that is irradiated with charged particles, a fluorescent film being in contact with a first surface facing a second surface of the scintillator, the second surface being irradiated with the charged particles, and a photodetector that detects luminescence of the fluorescent film, wherein the fluorescent film has a plurality of regions, the plurality of regions respectively have phosphors that absorb luminescence of the scintillator and emit light with different wavelengths from one another, and a charged particle beam device using the charged particle detector.

Charged particle detector and charged particle beam device using the same

A charged particle beam apparatus includes a charged particle source, a separator, a charged particle beam irradiation switch, and a control device. The separator is inserted into a charged particle optical system and deflects a traveling direction of a charged particle beam out of an optical axis of the charged particle optical system or deflects the traveling direction in the optical axis of the charged particle optical system. The charged particle beam irradiation switch absorbs the charged particle beam deflected out of the optical axis of the charged particle optical system or reflects the charged particle beam toward the separator. The control device controls a charged particle beam irradiation switch.

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Tokyo, Japan

Yasuhiro Shirasaki