Sumco Corporation

Yasuhiro Oura

Koji Kato

Shigeru Umeno

Takaaki Shiota

A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0&#xd7;10atoms/cmby the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.

Silicon wafer for IGBT and method for producing same

This method for manufacturing an SOI wafer includes: a step of subjecting a mirror-polished active layer wafer to a rapid thermal annealing treatment; a step of forming insulating films in a front surface and a rear surface of the active layer wafer; a step of bonding the active layer wafer and a support wafer with the insulating film therebetween so as to form a bonded wafer; a step of loading the bonded wafer on a wafer boat in a state such that a portion of the active layer wafer is in contact with the wafer boat, and then subjecting the bonded wafer to a heat treatment for bonding enhancement which enhances a bonding strength between the active layer wafer and the support wafer in the bonded wafer; and a step of thinning a portion of the active layer wafer.

Method for manufacturing SOI wafer

This method for manufacturing an SOI wafer includes: a step of forming insulating films in a front surface and a mirror-polished rear surface of an active layer wafer; a step of removing the insulating film in the front surface of the active layer wafer; a step of subjecting the active layer wafer to a rapid thermal annealing process; a step of bonding the active layer wafer and a support wafer with the insulating film formed in the rear surface therebetween so as to form a bonded wafer; a step of subjecting the bonded wafer to a heat treatment for bonding enhancement which enhances a bonding strength between the active layer wafer and the support wafer; and a step of thinning the active layer wafer in the bonded wafer so as to form an SOI layer.

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Tokyo, Japan

Yasuhiro Oura