Hitachi, Ltd.

Hitachi-high-technologies Corporation

Hitachi Tokyo Electronics Co., Ltd.

Oki Electric Industry Co., Ltd.

Renesas Technology Corp.

Yasuhiro Mitsui

Hiroyasu Shichi

Muneyuki Fukuda

Kaoru Umemura

Satoshi Tomimatsu

Hidemi Koike

Hideo Kashima

Mitsuo Tokuda

Katsuhiro Kuroda

Hideo Todokoro

Hiroshi Kakibayashi

Takashi Irie

Tokuo Kure

Tadashi Otaka

Yasutsugu Usami

Kazutaka Tsuji

Shigeto Isakozawa

Mikio Ichihashi

Ken Ninomiya

Tatsuo Makishima

Eiichi Hazaki

Masanari Koguchi

Osamu Yamada

Takashi Furukawa

Yoshikazu Inada

Yuya Toyoshima

Susumu Kato

Hiroshi Yanagita

Osamu Satou

Isao Kawata

Keiji Hasumi

Yoshitoshi Ito

Yasuhiko Nara

Hiroshi Takeuchi

Kensuke Sekihara

Fumio Kawaguchi

Hiroshi Toyama

Tohru Ando

Takashi Nishida

Ruriko Tsuneta

Tsutomu Saito

Kuniyasu Nakamura

Osami Okada

Jun Motoike

Nobuyuki Iriki

Masaaki Komori

Tomoharu Obuki

Kazuo Nakano

Katsuo Ooki

Katsumi Kuriyama

Kazuaki Mizokami

Yoshimi Sudo

Munetoshi Fukui

Yusuke Yajima

Kazuo Takeda

Aritoshi Sugimoto

Hisaya Murakoshi

Keiichi Nagai

Yuzuru Ohji

Yuichi Yamashita

Shiro Kamohara

Kyoichiro Asayama

Keiichi Kanehori

Michimasa Funabashi

Tsutomu Komoda

Hidekazu Okuhira

Jiro Tokita

Katsuhiko Itoh

Satoshi Shimura

Takeshi Tajima

Munetaka Haida

Sadao Matsuoka

Takuya Maruizumi

Shinichiro Watase

Hideo Tadokoro

Fumiko Arakawa

An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

Method and apparatus for processing a micro sample

Method and apparatus for processing a microsample

An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency. In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.

Specimen inspection equipment and how to make the electron beam absorbed current images

For adjusting a positional relationship between a specimen and a probe to measure an electric characteristic of the specimen through a contact therebetween, a base table holding a specimen table holding the specimen and a probe holder holding the probe is positioned at a first position to measure the positional relationship between the probe and the specimen at the first position, and subsequently positioned at a second position to measure the positional relationship therebetween at the second position so that the probe and the specimen are contact each other at the second position, the specimen table and the probe holder are movable with respect to each other on the base table at each of the first and second positions to adjust the positional relationship between the probe and the specimen, and a measuring accuracy at the second position is superior to a measuring accuracy at the first position.

Defective product inspection apparatus, probe positioning method and probe moving method

Specimen inspection equipment and how to make electron beam absorbed current images

An image processing system comprises an image providing apparatus which provides an image file, from which a digital watermark information can be extracted by using a watermark key that includes an authentication information which authenticates the image file provided by an valid provider, and the watermark key of the image file; and an image utilizing apparatus which extracts the digital watermark information from the image file provided by the image providing apparatus using the watermark key provided by the image providing apparatus, verifies whether the watermark key has been tampered or not using the authentication information in the watermark key, verifies whether the image file has been tampered or not using the verified watermark key, and displays the verified image file.

Image processing system utilizing digital watermarks in predetermined regions

A test pattern formed in a scribe line area of a wafer is irradiated with a light beam to measure the width thereof; the test pattern is irradiated with an electron beam so as to measure the width thereof; an amount of change in the width of the test pattern is calculated; a dummy pattern having the same width as that of a semiconductor device of the wafer is irradiated with an electron beam to measure the width thereof; and the width of a pattern is estimated by the use of the calculated amount of width change so as to determine the shape of the pattern. Thus, a shape measuring system and method capable of determining the shape of a micropattern in a semiconductor device without changing the dimensions of the micropattern can be provided.

Micropattern shape measuring system and method

Growing community of inventors

Fuchu, Japan

Yasuhiro Mitsui