Hitachi, Ltd.

Other

Shinmaywa Industries, Ltd.

Veb Carl Zeiss Jena. Ddr.

Yasuhiro Koizumi

Akira Shimase

Junzou Azuma

Michinobu Mizumura

Fumikazu Itoh

Satoshi Haraichi

Kouichi Nose

Isao Tokomoto

Toshio Yamada

Hidemi Koike

Kenichi Onisawa

Tetsuro Minemura

Yuichi Hamamura

Yuuichi Hamamura

Norimasa Nishimura

Yasushi Ihara

Shiro Takigawa

Kazuo Uetani

Akira Katou

Hiroshi Yamaguchi

Mikio Hongo

Yoshihiko Okamoto

Yukio Miya

Tateoki Miyauchi

Takao Kawanabe

Katsurou Mizukoshi

Soichi Torisawa

Shirou Takigawa

Takanobu Hori

Wolfgang Retschke

Gudrun Dietz

Walter Gartner

In ion plating in which a substrate is held on a substrate holder placed in an evacuated vacuum chamber and plasma is generated in the vacuum chamber to be formed into a film, a bias voltage composed of a negative bias component having a predetermined negative voltage value for a predetermined output time and a pulse bias component corresponding to a pulse output having a constant positive value for a predetermined time and output with a cycle set in the rage of 1 kHz-1 GHz is supplied to the inside of the vacuum chamber through the substrate holder by a power supply unit.

Ion plating device and ion plating method

A plasma display panel (PDP), consisting of a front panel ( ) equipped with display electrodes ( ) and a rear panel ( ) equipped with address electrodes ( ), that displays an image by causing discharge in a small discharge space formed between the two panels; wherein there are provided two layers of protective films ( ), made of metallic oxide, covering the dielectric layer ( ) installed on the front panel ( ); the outer, upper layer ( ) being formed into a layer of material with a specific surface area of 20 m /g or more and a film thickness of 1 &mgr;m or less, exhibiting a high discharge characteristic; and the inner, lower layer ( ) being formed into a layer of material with a specific surface area of 10 m /g or less and a film thickness of 1 &mgr;m or more, exhibiting a low water-adsorption characteristic.

Plasma display panel

There is provided a plasma display panel (PDP), consisting of a front panel ( ) equipped with display electrodes ( ) and a rear panel ( ) equipped with address electrodes ( ), that displays an image by causing discharge in a small discharge space formed between the two panels; wherein there are provided two layers of protective films ( ), made of metallic oxide, covering the dielectric layer ( ) installed on the front panel ( ); the outer, upper layer ( ) being formed into a layer of material with a specific surface area of 20 m /g or more and a film thickness of 1 &mgr;m or less, exhibiting a high discharge characteristic; and the inner, lower layer ( ) being formed into a layer of material with a specific surface area of 10 m /g or less and a film thickness of 1 &mgr;m or more, exhibiting a low water-adsorption characteristic.

An arc evaporator comprises: an anode; an evaporation source electrode as a cathode; and a current control unit for supplying an AC square wave arcing current across the anode and the evaporation source electrode.

Arc evaporator, method for driving arc evaporator, and ion plating apparatus

In a method for observing or processing and analyzing the surface of a sample by irradiating a charged beam on the sample covered at least partially by an insulator film, an ultraviolet light is irradiated possibly as pulse on the sample (substrate), thereby transforming the insulator into a conductive material due to the photoconductivity effect, thereby transforming the surface of the sample (substrate) into a conductive material, so that charged particles are grounded from a grounded portion in order to prevent the charged beam from being repulsed due to charged particles of the irradiated charged beam accumulated in the insulator formed on the surface of the sample (substrate).

Method and apparatus for observing or processing and analyzing using a charged beam

A secondary charged particle image acquisition method and its apparatus for detecting a secondary charged particle image. The method includes the steps of irradiating a surface of a specimen with a focused charged particle beam and detecting a secondary charged particle emanated from the surface of the specimen, obtaining a secondary charged particle image based on the detected secondary charged particle, irradiating a positive ion beam on the surface of the specimen where the focused charged particle beam is irradiated and inducing a conductive layer on the surface of the specimen by the irradiation of the positive ion beam and diffusing an electric charge on the surface of the conductive layer.

Method and its apparatus for detecting a secondary electron beam image and a method and its apparatus for processing by using focused charged particle beam

In order to improve the inspection efficiency of a photomask having a phase shifter pattern, the inspection of the photomask having the phase shifter pattern is divided into three steps, an anomaly extraction step, a first anomaly discrimination step and a second anomaly discrimination step. These inspection steps are performed at different inspection regions. An anomaly extraction station 7 for the anomaly extraction inspects the presence or absence of an anomaly for all the regions of the photomask 1. An anomaly discrimination station 8 for the anomaly discrimination classifies the content of the anomaly. A phase difference measurement station 9 for the anomaly discrimination measures the phase difference error.

Photomask manufacturing process and semiconductor integrated circuit

A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degradation of the performance due to the reactive gas. The system is designed in such a way that a shutter mechanism is provided in the form of the charged particle detector, and a chamber for accommodating the charged particle detector can be evacuated. In the observation of the sample, the charged particle detector is turned on to open the shutter mechanism, and in the processing of the sample, the charged particle detector is turned off or left as it is to shut the shutter mechanism to evacuate the inside of the charged particle detector.

Method of processing a sample using a charged beam and reactive gases

An optical mask for a projection optical system and a method of correcting the mask wherein the mask includes a light intercepting pattern formed on a transparent substrate and a phase shifter for changing the phase of an exposure light provided at predetermined openings of the light intercepting pattern. An etching stopper film which transmits the exposure light is provided between said phase shifter and said light intercepting pattern and for correction of the mask a focused ion beam is utilized for removal of defects by the phase shifter.

Optical mask and method of correcting the same

A defect of a phase shift mask, which has a phase shifter disposed on a transparent substrate, formed into a predetermined pattern and acting to shift a phase of exposure light transmitted therethrough and an etching stopper disposed between the phase shifter and the transparent substrate, which is resistant to an etching to which the phase shifter is subjected and transparent for exposure light is corrected by selectively etching a defective portion of the phase shifter, having a lacking type defect, with respect to the etching stopper layer along the whole thickness of the phase shifter and by perforating a portion of the etching stopper layer and the transparent substrate positioned under the etched defective portion by a depth which corresponds to a magnitude of an optical path of the phase shifter for the exposure light, the etching being a reactive etching which uses charged particle beam and a reactive gas and, the bottom surface of a portion etched being flattened by utilizing a fact that the phase shifter is selectively etched.

Phase shift mask, method of correcting the same and apparatus for

Apparatus for processing a sample using a charged beam and reactive gases

Exposure of fine patterns on a photoresist is carried out by controlling the humidity and temperature of a gas to be supplied to an exposure apparatus separate from the ambient atmosphere. Temperature of the atmosphere at least in the vicinity of a photoresist is controlled in a predetermined range and air or gas to be supplied to the exposure space is humidified to a desired degree. Water content in the photoresist is kept uniform and constant by the specially controlled atmosphere and enables uniform pattern width of the exposed fine pattern all over the photoresist surface.

Exposure of uniform fine pattern on photoresist

A photo-mask is mounted on a repairing chamber, with its mask pattern forming surface being exposed to the interior of the chamber. Vaporized repairing material which includes a metallic element is introduced into the chamber, and a laser beam is projected from the exterior of the chamber onto a transparent defect of the mask pattern. The irradiated portion is heated and the vaporized repairing material at the heated portion is resolved, resulting in the metal resolved from the repairing material deposits and fills the transparent defect. Thus, transparent defects of a mask pattern can be repaired in a simplified process.

Method and apparatus for repairing defects on a photo-mask pattern

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Nishinomiya, Japan

Yasuhiro Koizumi