Mitsubishi Denki Kabushiki Kaisha

Yasuhiro Kanda

Kazuyoshi Maekawa

Noboru Sekiguchi

Mitsuo Kimoto

A ternary metal silicide layer is formed between a silicon substrate and a barrier layer, in a contact structure including: a substrate having a silicon part; an insulating layer formed on the substrate, and having a connection hole that reaches the silicon part, a barrier layer formed at least on an inner surface of the connection hole; and a conductive member buried inside the barrier layer.

Contact structure, method of forming the same, semiconductor device, and method of manufacturing the same

A method of producing a semiconductor device having a polymetal wiring structure fabricated by a polycrystalline silicon film, a reaction preventing film, and a tungsten film comprising steps of forming a polycrystalline silicon film and a tungsten nitride film on a silicon substrate ; forming a tungsten film using a target of tungsten containing fluorine of 10 ppm or less by a sputtering method; and forming a gate electrode by patterning a polycrystalline silicon film , the tungsten nitride film , and the tungsten film , whereby a content of fluorine can be reduced, a film separation is prevented, and a preferable transistor property is obtainable.

Growing community of inventors

Tokyo, Japan

Yasuhiro Kanda