Hitachi, Ltd.

Hitachi-High-Technologies Corporation

Yasuhiko Ozawa

Satoru Yamaguchi

Yuji Takagi

Atsushi Takane

Osamu Komuro

Seiji Isogai

Kenji Obara

Hidetoshi Morokuma

Ryo Nakagaki

Takashi Iizumi

Tatsuya Maeda

Juntaro Arima

Shoji Yoshida

Mitsuji Ikeda

Atsushi Shimoda

Kenji Watanabe

Toshiei Kurosaki

Hideo Todokoro

Mitsugu Sato

Toshifumi Honda

Chie Shishido

Haruo Yoda

Makoto Ezumi

Tadashi Otaka

Yuichi Hamamura

Hisafumi Iwata

Takuo Tamura

Junko Konishi

Yoko Ikeda

Ichirou Ishimaru

Shinichi Sato

Hideaki Koizumi

Koichi Sano

Tetsuo Yokoyama

Hirohito Okuda

Ryuzaburo Takeda

Katsuhiro Kitahashi

Ryou Nakagaki

Hideka Banba

Hideka Bamba

An object of the present invention is to provide a scanning electron microscope for reducing a process concerning inspection positioning or an input operation, thereby functioning with high precision at high speed. To accomplish the above object, the present invention provides a scanning electron microscope having a function for identifying a desired position on the basis of a pattern registered beforehand, which includes a means for setting information concerning the pattern kind, the interval between a plurality of parts constituting the pattern, and the size of parts constituting the pattern and a means for forming a pattern image composed of a plurality of parts on the basis of the information obtained by the concerned means.

Scanning electron microscope

A method for classifying defects, including: calculating feature quantifies of defect image which is obtained by imaging a defect on a sample; classifying the defect image into a classified category by using information on the calculated feature quantities; displaying the classified defect image in a region on a display screen which is defined to the classified category; adding information on the classified category to the displayed defect image; transferring the displayed defect image which is added the information on the classified category to one of the other categories and displaying the transferred defect image in a region on the display screen which is defined to the one of the other categories; and changing information on the category.

Inspecting method, inspecting system, and method for manufacturing electronic devices

A charged particle beam apparatus for obtaining information of an uneven surface or a depression/protrusion of a sample by irradiating a charged particle beam to a sample having an uneven surface or a depression/protrusion at a plurality of focal positions, measuring signal emitted from the sample, and comparing profile waveforms corresponding to edge portions of the uneven surface.

Charged particle beam apparatus

Disclosed herein is a scanning electron microscope capable of determining quality of a semiconductor pattern, deformation of contact-holes, and inclination of the sidewall of the contact-holes, respectively. To that end, the scanning electron microscope includes image pickup means for picking up images of a circuit pattern formed on a semiconductor wafer on a preset condition, calculation means for comparing each of the images picked up by the image pickup means with a prestored reference image to thereby calculate a feature of the images picked up, and a computer for executing evaluation on quality of the circuit pattern on the basis of the feature calculated by the calculation means, and calculation of the feature is executed independently with reference to a secondary electron image, and each of back-scattering electron images.

Scanning electron microscope for determining quality of a semiconductor pattern

An object of the present invention is to provide a charged particle beam apparatus and an alignment method of the charged particle beam apparatus, which make it possible to align an optical axis of a charged particle beam easily even when a state of the charged particle beam changes. The present invention comprises calculation means for calculating a deflection amount of an alignment deflector which performs an axis alignment for an objective lens, a plurality of calculation methods for calculating the deflection amount is memorized in the calculation means, and a selection means for selecting at least one of the calculation methods is provided.

Charged particle beam alignment method and charged particle beam apparatus

According to the present invention, techniques including a method and apparatus for classifying and displaying images are provided. In an embodiment of the present invention a defect image classification method using inspected objects is provided. The method includes defect images obtained from at least one inspected object. Next a set of defect images is classified into a specified category, which has a feature. The defect images are arranged for display according to the feature and then displayed. The arranging of the defect images may also be based on an evaluation value for each defect image. Another embodiment provides a defect image classification method using inspected objects. Defect images are obtained from at least one inspected object. Next the defect images are classified into a plurality of categories and at least two information items for example, a defect distribution diagram showing locations of defects in the inspected object, information associated with a category of the plurality of categories, and a defect size distribution, are displayed.

Defect image classifying method and apparatus and a semiconductor device manufacturing process based on the method and apparatus

A system for analyzing defects in electronic circuit patterns, including: comparing position information of structural defects with position information of electrical faults and extracting corroborated defects having common position information between the structural defects and electrical faults; classifying images of extracted corroborated defects into critical defect images and non-critical defect images based on a pre-stored classification rule which defines critical and non-critical defects by referring to images of defects, position information of defects, and results of performing an electronic test; modifying the pre-stored classification rule by correcting classification of classified defect images displayed on the screen; and repeating the operations for each subsequent object, wherein for each present object under inspection, using a modified pre-stored classification rule with respect to a previous object, as the pre-stored classification rule for the operations with respect to the present object.

Method for analyzing circuit pattern defects and a system thereof

An operator-free and fully automated semiconductor inspection system with high throughput is realized. All conditions required for capturing and inspection are generated from design information such as CAD data. In order to perform actual inspection under the conditions, a semiconductor inspection system is composed of a navigation system for generating all the conditions required for capturing and inspection from the design information and a scanning electron microscope system for actually performing capturing and inspection. Moreover, in the case of performing a matching process between designed data and a SEM image, deformed parts are corrected by use of edge information in accordance with multiple directions and smoothing thereof. Furthermore, a SEM image corresponding to a detected position is re-registered as a template, and the matching process is thereby performed.

Semiconductor inspection system

An image picked up by a detection system capable of actualizing a three-dimensional inclination is usually poor in the signal-to-noise ratio, and it is difficult to stably detect minute defects. Images that actualize a three-dimensional inclination are picked up from opposed directions. The images are subject to subtraction and addition. The images improved in signal-to-noise ratio as compared with original images are calculated. The images calculated and improved in signal-to-noise ratio respectively of a defect portion and a reference portion are compared with each other. Regions differing in comparison results are detected as defects. As a result, minute defects can be inspected stably.

Defect inspection method

A method for determining a depression/protrusion, especially of a line and space pattern formed on a sample, and an apparatus therefor. A charged particle beam is scanned with its direction being inclined to the original optical axis of the charged particle beam or a sample stage is inclined, broadening of a detected signal in a line scanning direction of the charged particle beam is measured, the broadening is compared with that when the charged particle beam is scanned with its direction being parallel to the original optical axis of the charged particle beam, and a depression/protrusion of the scanned portion is determined on the basis of increase/decrease of the broadening.

Method for determining depression/protrusion of sample and charged particle beam apparatus therefor

The present invention has an analyzing unit including an image detection device for producing a plurality of images of a workpiece, a storage for storing detected images produced by the image detection device, and a display having a screen with a first area for displaying a plurality of detected images stored in the storage and a plurality of second areas for classifying the detected images according to features of the detected images, whereby the plurality of detected images are moved on the screen from the first area to selected second areas to classify the plurality of detected images in the second areas.

In order to allow critical flaws in an inspected item to be determined early during a production process, the present invention includes the following steps: a step of detecting defects in a production process for the inspected item and storing defect positions; a step of collecting detailed defect information and storing the detailed information in association with defect positions; a step of storing positions at which flaws were generated based on a final inspection of the inspected item; a step of comparing defect positions with positions at which flaws were generated; and a step of classifying and displaying detailed information based on the comparison results.

Method and system for analyzing circuit pattern defects

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Abiko, Japan

Yasuhiko Ozawa