Tokyo Electron Limited

Lintec Co., Ltd.

Tokyo Electrcn Limited

Yasuhiko Kojima

Naoki Yoshii

Taro Ikeda

Tadahiro Ishizaka

Atsushi Gomi

Yasuhiro Oshima

Tatsuo Hatano

Einstein Noel Abarra

Tetsuya Miyashita

Tomohisa Hoshino

Hiroshi Sone

Takashi Shigeoka

Hiroaki Chihaya

Vincent Vezin

Hiroshi Kannan

Naoki Watanabe

Yumiko Kawano

Hiroshi Miki

Joseph T Hillman

Hideaki Yamasaki

Junichi Arami

Shinji Furukawa

Kohei Kawamura

Shuji Azumo

Tugrul Yasar

Hirofumi Ono

Tatsuo Hirasawa

Yusuke Suzuki

Kanto Nakamura

Hiroyuki Mori

Koichi Takatsuki

Chiaki Yasumuro

Hiroyuki Yokohara

Toru Kitada

Yasunobu Suzuki

Atsushi Shimada

Kenichi Kubo

Hideki Yoshikawa

Koumei Matsuzawa

Tooru Kitada

Noboru Tamura

Yukio Fukuda

Kenichi Imakita

Keisuke Sato

Kenji Hiwa

There is a film forming apparatus comprising: a first holder holding a first target formed of a first material; a second holder holding a second target formed of a second material different from the first material; and a mounting table holding a substrate, the mounting table rotatable with a central axis of the mounting table as a rotation axis, wherein a distance from the central axis of the mounting table to a center of a sputter surface of the first target is different from a distance from the central axis of the mounting table to a center of a sputter surface of the second target.

Film forming apparatus and method of controlling film forming apparatus

A substrate processing apparatus includes: a stage having an electrostatic chuck configured to attract a substrate; a measurement part configured to measure a temperature of the stage; and a detection part configured to detect an abnormality caused by attraction of the substrate by the electrostatic chuck, based on a fluctuation of the temperature of the stage.

Substrate processing apparatus and abnormality detection method

A film forming apparatus comprises a processing chamber connected to a ground potential, a holder configured to hold a target, a DC power supply configured to apply a DC voltage to the holder and an anti-adhesion shield disposed to surround the target and supported by the processing chamber through an insulating member. An impedance matcher is connected to the anti-adhesion shield and an RF power supply is connected to the impedance matcher.

Film forming apparatus

A substrate processing apparatus includes: a stage including an electrostatic chuck configured to attract a substrate; a heater configured to heat the stage; a heating drive part configured to supply power to the heater so that a temperature of the stage becomes a target value; and a detector configured to detect an abnormality in attraction of the substrate by the electrostatic chuck, wherein the detector is further configured to detect the abnormality based on fluctuation of the power supplied to the heater, the fluctuation being generated by the attraction of the substrate by the electrostatic chuck.

A film forming apparatus includes: a processing container; a substrate holder that holds the substrate in the processing container; and a target assembly disposed in an upper side of the substrate holder. The target assembly includes: a target made of metal, including a main body and a flange provided around the main body, and emitting sputter particles from the main body; a target holder including a target electrode configured to supply power to the target, and holding the target; a target clamp that clamps the flange of the target to the target holder; and an anti-deposition shield provided around the main body of the target to cover the flange, the target clamp, and the target holder, and having a labyrinth structure in which an inner tip end thereof is disposed to enter a recess between the main body of the target and the target clamp.

A deposition device according to one embodiment includes a processing container. A mounting table is installed inside the processing container, and a metal target is installed above the mounting table. Further, a head is configured to inject an oxidizing gas toward the mounting table. This head is configured to move between a first region that is defined between the metal target and a mounting region where a target object is mounted on the mounting table and a second region spaced apart from a space defined between the metal target and the mounting region.

Deposition device and deposition method

System and method of insulating film deposition. A sputter deposition chamber comprises a pair of targets made of the same insulating material. Each target is applied with a high frequency power signal concurrently. A phase adjusting unit is used to adjust the phase difference between the high frequency power signals supplied to the pair of targets to a predetermined value, thereby improving the in-plane thickness distribution of a resultant film. The predetermined value is target material specific.

Dual-target sputter deposition with controlled phase difference between target powers

In a film forming method for forming a Co film on a substrate provided in a processing chamber, gaseous Co(CO)as a single film forming material is supplied into the processing chamber. Then, the gaseous Co(CO)is thermally decomposed on the substrate to form the Co film on the substrate.

Film forming method and storage medium

A film forming method includes mounting a substrate on a mounting member after loading the substrate into a reaction chamber, adsorbing a compound of a first metal on a surface of the substrate by supplying a source gas containing the compound of the first metal into the reaction chamber, reducing the compound of the first metal adsorbed on the substrate by making a reducing gas contact therewith to thereby obtain a first metal layer, and alloying the first metal and a second metal to obtain an alloy layer of the first metal and the second metal by injecting the second metal into the first metal layer. The second metal is ejected from a target electrode facing the substrate by making a sputtering plasma contact with the target electrode, and at least a surface of the target electrode is formed of the second metal different from the first metal.

Method of forming film, film forming apparatus and storage medium

In a method for forming a Cu film, a CVD Cu film is formed on a CVD-Ru film that is formed on a wafer W. In the method, the wafer W having the CVD-Ru film is loaded into a chamber, and a film-forming source material in a vapor state is introduced into the chamber. The film-forming source material includes Cu(hfac)TMVS that is a Cu complex having a vapor pressure higher than that of Cu(hfac)produced as a by-product during the film formation. When the CVD-Cu film is formed, the pressure within the chamberis controlled to a pressure at which the desorption and diffusion of Cu(hfac)adsorbed on the surface of the CVD Ru film proceed.

Method for forming Cu film and storage medium

A Cu film is deposited on a substrate by ALD (Atomic Layer Deposition) process, in which: a Cu-carboxyl acid complex or a derivative thereof having a high vapor pressure and wettability to a base is used in a gasified state; His used as a reductive gas; and a step of adsorbing a source material gas to a substrate and a step of forming a Cu film by reducing the adsorbed gas with a reductive gas are repeated alternately. With this method, a conformal Cu film having excellent quality can be formed.

Copper film deposition method

Provided is a semiconductor device which has excellent adhesiveness to a copper film and a base film thereof and has a small resistance between wirings. The semiconductor device includes a porous insulating layer (SIOC film) which absorbed water from the atmosphere, and a substrate (wafer W) having a trenchformed on such insulating film is placed in a processing chamber. The substrate is coated with a first base film (Ti film) made of a valve metal. The surface of the first film brought into contact with the insulating film is oxidized by the water discharged from the insulating layer, and a passivation filmis formed. The surface of the first base film is coated with a second base film made of nitride or carbide of the valve metal, and a copper filmis formed on the surface of the second base film by CVD by using a copper organic compound as a material.

Semiconductor device manufacturing method using valve metal and nitride of valve metal

A semiconductor device, which suppresses formation of an organic impurity layer and has excellent adhesiveness to a copper film and a metal to be a base, is manufactured. A substrate (wafer W) coated with a barrier metal layer (base film)formed of a metal having a high oxidation tendency, such as titanium, is placed in a processing chamber. At the time of starting to supply water vapor or after that, a material gas containing an organic compound of copper (for instance, Cu(hfac)TMVS) is supplied, and a copper film is formed on the surface of the barrier metal layerwhereupon the oxide layeris formed by the water vapor. Then, heat treatment is performed on the wafer W, and the oxide layeris converted into an alloy layerof a metal and copper which constitute the barrier metal layer

Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, computer program and storage medium

A film forming method is provided with a substrate placing step wherein a substrate is placed in a process chamber in an airtight status; a first film forming step wherein the process chamber is supplied with water vapor and a material gas including an organic compound of copper, and an adhered layer of copper is formed on the substrate; an exhaust step wherein the water vapor and the material gas in the process chamber are exhausted; and a second film forming step wherein the process chamber is resupplied with only the material gas and a copper film is further formed on the adhered layer.

Film forming method, film forming apparatus and storage medium

A substrate processing unit comprises a processing vessel for receiving a substrate, a cleaning gas supply system for supplying cleaning gas to the processing vessel so as to clean the interior of the processing vessel, an exhauster for exhausting the processing vessel, an operating state detector for detecting the operating state of the exhauster, and an end point detector for detecting the end point of the cleaning on the basis of the detection result from the operating state detector.

Substrate processing unit, method of detecting end point of cleaning of substrate processing unit, and method of detecting end point of substrate processing

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Nirasaki, Japan

Yasuhiko Kojima