Nec Corporation

Nec Electronics Corporation

Yasuhide Den

Takayuki Abe

Kohji Kanamori

Junichi Suzuki

Masanobu Zenke

Noriaki Kodama

Kenji Okamura

Akio Toda

Teiichirou Nishizaka

Shinji Fujieda

Takamasa Tanikuni

A wiring member which becomes substantially symmetrical on the plane of an electrostatic chuck unit is connected to the tip end of an RF introduction rod between the RF introduction rod and the electrostatic chuck unit in order to make uniform generation of an electric field due to bias RF which becomes a cause of plasma damage. The connection point between the electrostatic chuck unit and the wiring member may be single or plural.

Plasma processing apparatus, semiconductor manufacturing apparatus and electrostatic chucking unit used thereof

A nonvolatile memory device includes source and drain regions formed in a semiconductor substrate, and an insulating film formed on a channel region between the source region and the drain region in the semiconductor substrate. The nonvolatile memory device also includes a dielectric film formed above the channel region to store electric charge, and a control gate formed on the dielectric film. Compressive stress in the channel region is equal to or less than 50 MPa.

Nonvolatile memory and nonvolatile memory manufacturing method

The present invention provides a manufacturing method of a semiconductor device which does not give rise to peeling of a metal film caused by oxygen held in a interlayer insulating film even when the wafer is subjected to a heat treatment after the metal film is formed on the interlayer insulating film. After the formation of the interlayer insulating film, oxygen held in the interlayer insulating film is removed from the interlayer insulating film, then a metal film on the interlayer insulating film.

Method of manufacturing semiconductor device prevented from peeling of wirings from insulating film

In a semiconductor device having a passivation layer, the passivation layer includes a laminated configuration formed by a plurality of tight insulating layers and a plurality of coarse insulating layers alternating with the tight insulating layers.

Semiconductor device having laminated tight and coarse insulating layers

A method of fabricating a semiconductor device includes the steps of forming a wiring layer on the surface of a semiconductor substrate, depositing a silicone film on the whole surface of the semiconductor substrate including the wiring layer by a CVD method and exposing the silicone film to oxidative plasma with enhanced frequencies including components of 1 MHz or less to change to a silicon oxide film, the depositing step and exposing step being alternately repeated in the same apparatus till the silicon oxide film having any desired thickness is obtained. The resulting silicon oxide film has the smooth surface and the high density.

Growing community of inventors

Kawasaki, Japan

Yasuhide Den