Sen Corporation

Sumitomo Heavy Industries Ion Technology Co., Ltd.

Yasuharu Okamoto

Shiro Ninomiya

Akihiro Ochi

Toshio Yumiyama

Masaki Ishikawa

Yasuhiko Kimura

Takeshi Kurose

Yusuke Ueno

An ion implantation apparatus performs a plurality of ion implantation processes having different implantation conditions to a same wafer successively. The plurality of ion implantation processes are: (a) provided so that twist angles of the wafer differ from each other; (b) configured so that an ion beam is irradiated to a wafer surface to be processed that moves in a reciprocating movement direction; and (c) provided so that a target value of a beam current density distribution of the ion beam is variable in accordance with a position of the wafer in the reciprocating movement direction. Before performing the plurality of ion implantation processes to the same wafer successively, a control device executes a setup process in which a plurality of scanning parameters corresponding to the respective implantation conditions of the plurality of ion implantation processes are determined collectively.

Ion implantation apparatus

An ion implantation method includes transporting ions to a wafer as an ion beam, causing the wafer to undergo wafer mechanical slow scanning and also causing the ion beam to undergo beam fast scanning or causing the wafer to undergo wafer mechanical fast scanning in a direction perpendicular to a wafer slow scanning direction, irradiating the wafer with the ion beam by using the wafer slow scanning in the wafer slow scanning direction and the beam fast scanning of the ion beam or the wafer fast scanning of the wafer in the direction perpendicular to the wafer slow scanning direction, measuring a two-dimensional beam shape of the ion beam before ion implantation into the wafer, and defining an implantation and irradiation region of the ion beam by using the measured two-dimensional beam shape to thereby regulate the implantation and irradiation region.

Ion implantation method and ion implantation apparatus

On a plane of a semiconductor wafer, two types of in-plane regions comprising full-width non-ion-implantation regions and partial ion implantation regions, which are alternately arranged one or more times in a direction orthogonal to a scanning direction of an ion beam are created. During the creation of the partial ion implantation regions, reciprocating scanning using the ion beam can be repeated until the target dose can be satisfied while performing or stopping ion beam radiation onto the semiconductor wafer in a state in which the semiconductor wafer can be fixed. During the creation of the full-width non-ion-implantation regions, the semiconductor wafer can be moved without performing the ion beam radiation onto the semiconductor wafer. Then, by repeating fixing and movement of the semiconductor wafer plural times, ion implantation regions and non-ion-implantation regions are created in desired regions of the semiconductor wafer.

An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.

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Tokyo, Japan

Yasuharu Okamoto