Winbond Electronics Corporation

Yao-Ting Shao

Kuo-Chen Wang

Yi-Yu Hsu

Ishibashi Shigeru

The present invention uses a double exposure and double etching method to improve critical dimension uniformity. A coating layer is formed on a wafer that includes a first area and a second area. The first area and the second area are separately patterned with different processing conditions. By means of this two-stage patterning, the CD uniformity between wafer center and wafer edge is successfully improved over the conventional single-stage patterning process. The fabrication yield is thus enhanced.

Process for improving critical dimension uniformity

A method of manufacturing a contact is disclosed. A substrate is provided, and a first dielectric layer and a metal layer are formed thereon in sequence. A second dielectric layer is formed on the metal layer and the first dielectric layer. A bottom contact is formed in the second dielectric layer to electrically connect to the metal layer. A node contact is formed in the first and second dielectric layers. A capacitor is formed on the dielectric layer to electrically connect to the node contact, and a middle contact is formed on the second dielectric layer to electrically connect to the bottom contact. A third dielectric layer is formed on the capacitor, the middle contact and the second dielectric layer. A top contact is formed in the third dielectric layer to electrically connect to the middle contact.

Growing community of inventors

Sanchung, Taiwan

Yao-Ting Shao