Taiyuan University of Technology

Zhejiang University

Yanxia Cui

Guohui Li

Bingshe Xu

Ting Ji

Yuying Xi

Yuan Tian

Linlin Shi

Yaping Fan

Wenyan Wang

Kun Hu

Xianyong Yan

Ye Zhang

Disclosed is a high-resistance resistor based on silicon carbide. The resistor includes a semi-insulating 4H—SiC silicon carbide substrate, a silicon surface and a carbon surface of the silicon carbide substrate are provided with symmetrical atomic-thickness aluminum oxide insulating layers, thicknesses of the aluminum oxide insulating layers are 0.2 nm-2 nm, conductive metal electrodes are formed at two sides of the aluminum oxide insulating layers through evaporation, and thicknesses of the metal electrodes are 100 nm-500 nm. The present disclosure uses a high-resistance resistor based on silicon carbide that has the above structure, makes an ohmic contact electrode on a semi-insulating silicon carbide substrate, thus obtaining a resistor with a resistance of 100 TΩ or more, and satisfying requirements of the precision measurement industry.

High-resistance resistor based on silicon carbide and manufacturing method thereof

This application relates to preparation of organic photomultiplication photodetectors, and more particularly to an organic photomultiplication photodetector with bi-directional bias response and a method for producing the same. The photodetector includes an anode layer, an anode modification layer, an interfacial modification layer, an active layer and a cathode layer arranged in sequence. The interfacial modification layer is made of AlO. The anode layer is made of indium tin oxide (ITO). The anode modification layer is made of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS). The active layer is made of poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C-butyric acid methyl ester (P3HT:PCBM). The cathode layer is made of aluminum, silver or gold.

Organic photomultiplication photodetector with bi-directional bias response and method for producing same

The present application relates to semiconductor photodetectors, in particular to a silicon carbide-based UV-visible-NIR full-spectrum-responsive photodetector and a method for fabricating the same. The photodetector includes a silicon carbide substrate, and metal counter electrodes and a surface plasmon polariton nanostructure arranged thereon. The silicon carbide substrate and the metal counter electrodes constitute a metal-semiconductor-metal photodetector with coplanar electrodes. When the ultraviolet light is input, free carriers directly generated in silicon carbide are collected by an external circuit to generate electrical signals. When the visible light is input, hot carriers generated in the surface plasmon polariton nanostructure tunnel into the silicon carbide semiconductor to become free carriers to generate electrical signals.

Silicon carbide-based full-spectrum-responsive photodetector and method for producing same

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Shanxi, China

Yanxia Cui