Qualcomm Incorporated

Micron Technology Incorporated

Yangyang Sun

Dongming He

Lily Zhao

Li-Sheng Weng

Jaspreet Singh Gandhi

Wei Wang

Brandon P Wirz

Yue Li

Don L Yates

Jun Chen

Josh D Woodland

Stanley Seungchul Song

Junjing Bao

Michel Koopmans

Jin Li

Giridhar Nallapati

Manuel Aldrete

Zhijie Wang

Marcus Hsu

John Holmes

Randall S Parker

Hung-Yuan Hsu

Wei Hu

Ahmer Syed

Xuefeng Zhang

Jaspreet S Ghandi

Rong Zhou

Zhimin Song

Michael Han

Disclosed are techniques for integrated circuit device. In an aspect, an integrated circuit device includes a metallization structure that includes a top metal layer structure; a passivation layer on the metallization structure; a bump structure disposed on the first bump line structure; and a first polymer protection layer. The passivation layer may include one or more first openings. The first bump line structure may include one or more first extended portions respectively extending toward the top metal layer structure through the one or more first openings. The bump structure may be electrically coupled to the first bump line structure. The first polymer protection layer may be on the passivation layer, on a portion of the first bump line structure, and in contact with a side surface of the first bump line structure.

Flip-chip bumping metal layer and bump structure

A package comprising a first substrate; a first integrated device coupled to the first substrate; an interconnection die coupled to the first substrate; a second substrate coupled to the first substrate through the interconnection die such that the first integrated device and the interconnection die are located between the first substrate and the second substrate; and an encapsulation layer coupled to the first substrate and the second substrate, wherein the encapsulation layer is located between the first substrate and the second substrate.

Package comprising an interconnection die located between substrates

A package that includes a substrate comprising a cavity, a first integrated device coupled to the substrate through a first plurality of pillar interconnects and a first plurality of solder interconnects, a second integrated device coupled to the substrate through a second plurality of pillar interconnects and a second plurality of solder interconnects, and a plurality of wire bonds coupled to the first integrated device and the second integrated device, wherein the plurality of wire bonds is located over the cavity of the substrate.

Package comprising wire bonds coupled to integrated devices

Integrated circuit (IC) packages employing a re-distribution layer (RDL) substrate(s) with photosensitive non-polymer dielectric material layers for increased package rigidity, and related fabrication methods. To reduce or minimize warpage of an IC package employing a RDL substrate, the RDLs of the RDL substrate are photosensitive non-polymer dielectric material layers. The photosensitive non-polymer dielectric material layers can exhibit increased rigidity as a result of being hardened when exposed to light and cured during fabrication of the RDL substrate. The photosensitive non-polymer dielectric material layers can also exhibit increased rigidity as a result of being an inorganic polymer (e.g., SiOx, SiN material) that has a higher material modulus for increased stiffness and/or a lower coefficient of thermal expansion (CTE) for reduced thermal contraction and expansion, as opposed to for example, an organic polymer material (e.g., Polyimide) which has less stiffness and a higher CTE.

Integrated circuit (IC) package employing a re-distribution layer (RDL) substrate(s) with photosensitive dielectric layer(s) for increased package rigidity, and related fabrication methods

A package comprising a substrate, a first integrated device coupled to the substrate, a second integrated device coupled to the substrate, an interconnect integrated device coupled to the first integrated device and the second integrated device, and an underfill. The substrate includes a cavity. The interconnect integrated device is located over the cavity of the substrate. The underfill is located (i) between the first integrated device and the substrate, (ii) between the second integrated device and the substrate, (iii) between the interconnect integrated device and the first integrated device, and (iv) between the interconnect integrated device and the second integrated device.

Package comprising a substrate and a high-density interconnect integrated device

A thermal compression flip chip (TCFC) bump may be used for high performance products that benefit from a fine pitch. In one example, a new TCFC bump structure adds a metal pad underneath the TCFC copper pillar bump to cover the exposed aluminum bump pad. This new structure prevents the pad from corroding and reduces mechanical stress to the pad and underlying silicon dielectric layers enabling better quality and reliability and further bump size reduction. For example, a flip chip connection may include a substrate; a metal pad on a contact side of the substrate and a first passivation layer on the contact side of the substrate to protect the metal pad from corrosion.

Thermal compression flip chip bump for high performance and fine pitch

A package that includes a first integrated device comprising a first plurality of interconnects; a plurality of solder interconnects coupled to the first plurality of interconnects; a second integrated device comprising a second plurality of interconnects, wherein the second integrated device is coupled to the first integrated device through the second plurality of interconnects, the plurality of solder interconnects and the first plurality of interconnects; a polymer layer located between the first integrated device and the second integrated device; and a plurality of spacer balls located between the first integrated device and the second integrated device.

Package comprising spacers between integrated devices

An integrated device that includes a substrate, an interconnect portion and an interconnect structure. The interconnect portion is located over the substrate. The interconnect portion includes a plurality of interconnects and at least one dielectric layer. The interconnect structure is located over the interconnect portion. The interconnect structure includes an inner interconnect, a dielectric layer coupled to the inner interconnect, and an outer conductive layer coupled to the dielectric layer. The outer conductive layer is configured to operate as a shield for the inner interconnect.

Integrated device comprising interconnect structures having an inner interconnect, a dielectric layer and a conductive layer

Disclosed is a flip-chip device. The flip-chip device includes a die having a plurality of under bump metallizations (UBMs); and a package substrate having a plurality of bond pads. The plurality of UBMs include a first set of UBMs having a first size and a first minimum pitch and a second set of UBMs having a second size and a second minimum pitch. The first set of UBMs and the second set of UBMs are each electrically coupled to the package substrate by a bond-on-pad connection.

Flip-chip flexible under bump metallization size

Disclosed are devices, fabrication methods and design rules for flip-chip devices. Aspects include an apparatus including a flip-chip device. The flip-chip device including a die having a plurality of under bump metallizations (UBMs). A package substrate having a plurality of bond pads is also included. A plurality of solder joints coupling the die to the package substrate. The plurality of solder joints are formed from a plurality of solder bumps plated on the plurality of UBMs, where the plurality of solder bumps are directly connected to the plurality of bond pads.

Flip-chip device

An integrated circuit (IC) package is described. The IC package includes a die, having a pad layer structure on back-end-of-line layers on a substrate. The die also includes a metallization routing layer on the pad layer structure, and a first under bump metallization layer on the metallization routing layer. The IC package also includes a patterned seed layer on a surface of the die to contact the first under bump metallization layer. The IC package further includes a first package bump on the first under bump metallization layer.

Repurposed seed layer for high frequency noise control and electrostatic discharge connection

Aspects of the disclosure are directed to an integrated circuit. The integrated circuit may include a substrate, a first group of metal layers including a plurality of first fingers over the substrate, wherein the first fingers are formed without a via. The integrated circuit may further include a second group of metal layers including a plurality of second fingers over the first group of metal layers, wherein the second fingers are formed with vias, and wherein the first and the second group of metal layers are formed by a processing technology node of 7 nm or below.

High density and reliable vertical natural capacitors

Methods for forming semiconductor device packages include applying a photoimageable dielectric adhesive material to a major surface of a semiconductor die and at least partially over conductive elements on the semiconductor die. The photoimageable dielectric adhesive material may be removed from over the conductive elements. The conductive elements are aligned with and bonded to bond pads of a substrate, and the semiconductor die and the substrate are adhered with the photoimageable dielectric adhesive material. A semiconductor device package includes at least one semiconductor die including conductive structures thereon, a substrate including bond pads thereon that are physically and electrically connected to the conductive structures, and a developed photoimageable dielectric adhesive material disposed between the semiconductor die and the substrate around and between adjacent conductive structures.

Methods for forming semiconductor device packages with photoimageable dielectric adhesive material, and related semiconductor device packages

An integrated circuit construction includes a stack of two or more integrated circuit substrates. At least one of the substrates includes through substrate vias (TSVs) individually comprising opposing ends. A conductive bond pad is adjacent one of the ends on one side of the one substrate. A conductive solder mass is adjacent the other end projecting elevationally on the other side of the one substrate. Individual of the solder masses are bonded to a respective bond pad on an immediately adjacent substrate of the stack. Epoxy flux surrounds the individual solder masses. An epoxy material different in composition from the epoxy flux surrounds the epoxy flux on the individual solder masses. Methods of forming integrated circuit constructions are also disclosed.

Integrated circuit constructions having through substrate vias and methods of forming integrated circuit constructions having through substrate vias

Methods of forming a Ni material on a bond pad are disclosed. The methods include forming a dielectric material over an at least one bond pad, forming an opening within the dielectric material to expose the at least one bond pad, curing the dielectric material to form a surface of the dielectric material having a steep curvilinear profile, and forming a nickel material over the at least one bond pad. The dielectric material having a steep curvilinear profile may be formed by altering at least one of a curing process of the dielectric material and a thickness of the dielectric material. The dielectric material may be used to form a relatively thick Ni material on bond pads smaller than about 50 &#x3bc;m. Semiconductor structures formed by such methods are also disclosed.

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San Diego, CA, United States of America

Yangyang Sun