Texas Instruments Corporation

Yanghua He

Jingqiu Chen

Yaojian Leng

James Carl Baker

Anthony DiCarlo

David A Rothenbury

A chemical mechanical polishing pad and method for chemical-mechanical polishing is provided, wherein the polishing pad has a plurality of first mesas and one or more second mesas defined on a surface thereof. The plurality of first mesas are generally distributed about the surface of the polishing pad, wherein each of the plurality of first mesas has a first surface area associated therewith. The one or more second mesas are associated with a center region of the polishing pad, wherein each of the one or more second mesas has a second surface area associated therewith. The second surface area is at least twice the first surface area.

Chemical mechanical polishing pad having improved groove pattern

The present invention provides a method for planarizing a metal layer, and a method for manufacturing a micro pixel array. The method for planarizing the metal layer, without limitation, may include the steps of forming a metal layer over a photoresist layer, and then planarizing the metal layer using a chemical mechanical planarization process.

Method for chemical mechanical planarization of a metal layer located over a photoresist layer and a method for manufacturing a micro pixel array using the same

The present invention discloses a polishing pad that can facilitate process stability, extend length of use, and mitigate process non-uniformity and process induced defects for chemical mechanical planarization processes. The polishing pad of the present invention is a composite of a top pad and a sealed sub-pad. The sealed sub-pad has a sealing mechanism that mitigates liquid penetration into the sub-pad thereby maintaining a substantially uniform compressibility of the sub-pad and the polishing pad and extending a useable life of the polishing pad.

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Richardson, TX, United States of America

Yanghua He