Dynex Semiconductor Limited

Zhuzhou Crrc Times Electric Co., Ltd

Zhuzhou Crrc Times Semiconductor Co. Ltd.

Yangang Wang

Guoyou Liu

Ian Deviny

Robin Adam Simpson

Haihui Luo

Chunlin Zhu

Vinay Suresh

There is provided a semiconductor device, comprising: a housing comprising: a first housing electrodeand a second housing electrodearranged at opposite sides of the housing, and a tubular housing elementarranged between the first and second housing electrodesand configured to electrically isolate the first and second housing electrodesfrom one another; at least one semiconductor chiparranged within the housing between the first and second housing electrodes; and a metal explosion shieldarranged within the housing, wherein the metal explosion shieldis configured to extend into a space formed between the at least one semiconductor chipand the tubular housing elementsuch that the metal explosion shield surrounds the at least one semiconductor chip

Semiconductor device

We herein describe a semiconductor device sub-assembly comprising at least two power semiconductor devices and a contact of a first type. A first power semiconductor device is located on a first side of the contact of a first type, and a second power semiconductor device is located on a second side of the contact of a first type, where the second side is opposite to the first side.

High power density 3D semiconductor module packaging

We describe herein a high voltage semiconductor device comprising a power semiconductor device portion () and a temperature sensing device portion (). The temperature sensing device portion comprises: an anode region (), a cathode region (), a body region () in which the anode region and the cathode region are formed. The temperature sensing device portion also comprises a semiconductor isolation region () in which the body region is formed, the semiconductor isolation region having an opposite conductivity type to the body region, the semiconductor isolation region being formed between the power semiconductor device portion and the temperature sensing device portion.

Power semiconductor device with a temperature sensor

Growing community of inventors

Lincolnshire, United Kingdom

Yangang Wang