International Business Machines Corporation

Globalfoundries Inc.

Yang Liu

Bing Dang

Steven Lorenz Wright

John Ulrich Knickerbocker

Zheng Xu

Paul Stephen Andry

Dongbing Shao

Qianwen Chen

Yu Luo

Jae-Woong Nah

Bucknell Chapman Webb

Lubomyr Taras Romankiw

Kamal Kumar Sikka

Adinath S Narasgond

Maryse Cournoyer

Maurice Mason

Pascale Gagnon

Mark Christopher Wallen

Stefania Axo

Lawrence Alfred Clevenger

Dechao Guo

Zhenxing Bi

Christopher J Penny

Chengwen Pei

Kai D Feng

Marc Adam Bergendahl

Naigang Wang

Joshua M Rubin

Li-Wen Hung

Vijayeshwar Das Khanna

Hiroyuki Mori

Krishna R Tunga

Leigh Anne H Clevenger

Ravi K Bonam

Dale Curtis McHerron

Isabel De Sousa

Mahmoud Amin

Yue Tan

Keith Joseph Miller

Tian Shen

Christian Bergeron

Catherine Dufort

Kong Boon Yeap

Charles C Bureau

Bryan Gury

Anjum Mehta

Richard Polhemus

Dishit Paresh Parekh

A direct bonded heterogeneous integration (DBHi) device includes a substrate including a trench formed in a top surface of the substrate. The DBHi device further includes a first chip coupled to the substrate on a first side of the trench by a plurality of first interconnects. The DBHi device further includes a second chip coupled to the substrate on a second side of the trench by a plurality of second interconnects. The second side of the trench is arranged opposite the first side of the trench. The DBHi device further includes a bridge coupled to the first chip and to the second chip by a plurality of third interconnects such that the bridge is suspended in the trench. The DBHi device further includes a non-conductive paste material surrounding the plurality of third interconnects to further couple the bridge to the first chip and to the second chip.

Direct bonded heterogeneous integration silicon bridge

Aspects include identifying each of a plurality of audio sources proximate to a user wearing a headset. The audio sources include a primary audio source and a plurality of background audio sources. Aspects include causing the headset to play a set of audio sources to the user by causing each audio source of the set to be unfiltered by the headset. Aspects include determining an acceptance level of the user. Aspects also include determining a background noise filtering adjustment based on the acceptance level and the set of audio sources being played by the headset to the user. Aspects also include causing the headset to adjust a filtering of one or more of the plurality of background audio sources by the headset based on the background noise filtering adjustment.

Automatically aiding individuals with developing auditory attention abilities

A pillar structure is provided. The pillar structure includes a plurality of pillars. Each of the pillars include a capping material layer formed in a pit etched into a template wafer, a conductive plug formed on the capping material layer, a base layer formed on the conductive plug, and an attach material layer formed on the base layer. The pillars are joined vertically together to form the pillar structure.

Transferrable pillar structure for fanout package or interconnect bridge

Embodiments of the present invention are directed to a liquid delivery apparatus. A non-limiting example of the apparatus includes a substrate including a cavity formed in a surface of the substrate. The apparatus can also include a membrane disposed on the surface of the substrate covering an opening of the cavity. The apparatus can also include a hydrophobic layer disposed on the membrane. The apparatus can also include a seal disposed between the membrane and the substrate, wherein the seal surrounds the opening of the cavity. The apparatus can also include an electrode layer coupled to the membrane.

Fluid delivery device with hydrophobic surface

A micro-battery is provided in which a metallic sealing layer is used to provide a hermetic seal between an anode side of the micro-battery and the cathode side of the micro-battery. In accordance with the present application, the metallic sealing layer is formed around a perimeter of each metallic anode structure located on the anode side and then the metallic sealing layer is bonded to a solderable metal layer of a wall structure present on the cathode side. The wall structure contains a cavity that exposes a metallic current collector structure, the cavity is filled with battery materials.

Simplified hermetic packaging of a micro-battery

A computer system interacts with a user with a behavioral state. An activity performed by an entity with a behavioral state is determined. A virtual character corresponding to the entity and performing the determined activity of the entity is generated and displayed. A mental state of the entity responsive to the virtual character is detected. In response to detection of a positive mental state of the entity, one or more natural language terms are provided to the entity corresponding to the activity performed by the virtual character. Embodiments of the present invention further include a method and program product for interacting with a user with a behavioral state in substantially the same manner described above.

Behavior-based interactive educational sessions

A method forms an air gap metal tip structure for (ESD) protection. The method forms an air chamber, from an upper substrate and a lower substate disposed below the upper substrate, within which a first metal tip and a second metal tip are disposed. The first and second metal tips are disposed along at least one horizontal axis parallel to the upper and lower substrates. The chamber includes a portion between points of the metal tips, such that oxygen trapped in the chamber is converted into ozone responsive to an arc between the metal tips to dissipate the arc, and the ozone is decomposed back into the oxygen responsive to an arc absence between the metal tips to maintain the ESD protection for subsequent arcs. An under fill level is disposed between the lower and upper substrates, and above one or more layers having the first and second metal tips.

Air gap metal tip electrostatic discharge protection

An electronic package and a method of manufacture includes a substrate having an upper surface with a trench formed in a bridge region. First pads are arranged on the upper surface of the substrate, outside of the bridge region, and a bridge is positioned in the trench. A plurality of second pads are arranged on an upper surface of the bridge. A plurality of pillars are electrically coupled to the plurality of second pads. Two or more semiconductor chips are positioned in a side-by-side proximal arrangement overlaying the bridge and the substrate. A first semiconductor chip is joined to the bridge, then a second semiconductor chip is joined to the bridge, followed by attaching the chip-bridge assembly to the substrate with the bridge positioned within the substrate trench. Each of the two or more semiconductor chips have first electrical connections including bumps, and second electrical connections including third pads.

Mixed under bump metallurgy (UBM) interconnect bridge structure

An air gap metal tip structure is provided for (ESD) protection. The structure includes first and second metal tips disposed along at least one horizontal axis that is parallel to a upper substrate and a lower substrate. The structure includes an air chamber formed between the upper and lower substrate within which the first metal tip and the second metal tip are disposed. The air chamber includes a portion between points of the metal tips. The structure includes an under fill level disposed between the lower and upper substrates, and above one or more layers having the metal tips. Oxygen trapped in the air chamber is converted into ozone responsive to an arc between the metal tips to dissipate the arc, and the ozone is decomposed back into the oxygen responsive to an absence of the arc between the metal tips to maintain the ESD protection for subsequent arcs.

An apparatus includes a substrate mechanically and electrically connected on one side of the substrate to multiple metallic probes in one or more arrays and includes the multiple metallic probes in the one or more arrays. In a method, multiple pits may be formed in an array on a first substrate. The pits have a pyramidal shape. A release layer is formed on the first substrate and covers surfaces of the pits. Probe tips are formed in the pits on the first substrate. The probe tips are formed from rigid conductive material. Multiple pillars are formed from rigid conductive material. The pillars are electrically and mechanically connected to a second substrate and to the probe tips. Release is caused of the probe tips from the first substrate, wherein the pillars and probe tips are connected to the second substrate and together form an array of rigid and conductive probes.

Transdermal sensing probes and smart patch systems using same

A probe head that contains a coining surface and a plurality of probe tips integrated on a same side of the probe head is provided. The probe head has a first portion and a laterally adjacent second portion, wherein the first portion of the probe head contains the coining surface, and the second portion of the probe head contains the plurality of the probe tips. Each probe tip may, in some embodiments, extend outwards from a probe pedestal that is in contact with the second portion of the probe head. The probe head is traversed across the surface of a semiconductor wafer containing a plurality of solder bump arrays such that the coining surface contacts a specific array of solder bumps prior to contacting of the same specific array of solder bumps with the probe tips.

Integrated self-coining probe

An air gap metal tip structure is provided for ESD protection that includes a lower substrate and an upper substrate disposed above the lower substrate. The air gap metal tip structure includes a first and a second metal tip disposed along at least one horizontal axis that is parallel to the upper substrate and the lower substrate. The air gap metal tip structure includes an air chamber formed between the upper and lower substrates within which the first and second metal tips are disposed. The air chamber includes a portion between points of the metal tips. Oxygen trapped in the air chamber is converted into ozone responsive to an occurrence of an arc between the tips to dissipate the arc, and the ozone is decomposed back into the oxygen responsive to an absence of the arc between the tips to maintain the ESD protection for subsequent arcs.

One illustrative method disclosed herein includes forming a first transistor for an inverter and forming asymmetrically spaced first and second conductive contact structures that are conductively coupled to the source region and the drain region, respectively, of the transistor. In this example, the first conductive contact structure (for the source region) is positioned a first predetermined target distance from a first side of the gate structure of the transistor, and the second conductive contact structure (for the drain region) is positioned a second predetermined target distance from a second side of the gate structure, wherein the second predetermined target distance is less than the first predetermined target distance.

CMOS inverters with asymmetric contact distances and methods of making such inverters

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Ossining, NY, United States of America

Yang Liu