Samsung Electronics Co., Ltd.

Cheil Industries Inc.

Yang-Koo Lee

Seung-Ki Chae

Jung-Dae Park

Pil-Kwon Jun

Pil-kwon Jun

Kwang-Shin Lim

Tae-Hyo Choi

Se-Yeon Kim

Myoung-Ok Han

Sang-Mun Chon

Hun-Jung Yi

Yo-Han Ahn

Jae-Seok Lee

Dong-Won Hwang

Ju-A Ryu

Kook-Joo Kim

Jung-In La

Heung-Bin Lim

Won-Kyung Ryu

Sang-Eon Lee

Jeong-Heung Kong

Dong-Chul Heo

Hun-Hwan Ha

Hweon Jin

Myung-Ki Lee

The present inventive concept provides a substrate treating apparatus and an exposing apparatus that a chuck member, a chuck cleaning member including a cleaning tool removing a foreign substance on a substrate loading surface of the chuck member and a tool cleaning member cleaning a cleaning tool are disposed to be adjacent to each other inside a treating room. The present inventive concept also provides a method of cleaning a cleaning tool using a tool cleaning member. According to the above the apparatuses and the method, contamination of a chuck member by a cleaning tool is prevented and a defocus phenomenon caused by a particle on a chuck member during an exposing process can be minimized.

Substrate treating apparatus and exposing apparatus for cleaning a chuck cleaning tool with treating bath

Provided is an apparatus and method for analyzing contaminants on a wafer. The apparatus includes: a wafer holder for supporting a wafer on which contaminants to be analyzed are located, a laser ablation device for irradiating a laser to the wafer to extract a discrete specimen from the wafer, an analysis cell for collecting a discrete specimen from the surface of the wafer by irradiating the laser, and an analysis device connected to the analysis cell for analyzing contaminants from the collected discrete specimen.

Apparatus and method for analyzing contaminants on wafer

In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

Composition for etching silicon oxide and method of forming a contact hole using the same

A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where Ris a hydroxyl group or a hydroxyalkyl group, and Ris a hydrogen atom or a hydroxyalkyl group.

Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition

Disclosed are a composition for removing photoresist, a method of removing photoresist and a method of manufacturing a semiconductor device using a composition. The composition may include a ketone compound and a first polar aprotic solvent. The composition may also include the ketone compound and a second polar aprotic solvent. Moreover, the composition may include the first polar aprotic solvent and a second polar aprotic solvent with or without the ketone compound. The first polar aprotic solvent has at least one of an ether compound and an ester compound, and the second polar aprotic solvent has at least one of a sulfur-containing compound and a nitrogen-containing compound.

Composition for removing photoresist, method of removing photoresist and method of manufacturing a semiconductor device using the same

Growing community of inventors

Gwacheon-si, South Korea

Yang-Koo Lee