Mediatek Corporation

Yang-Hui Fang

Chao-Chun Tu

A semiconductor device comprises a first semiconductor die and a second semiconductor die. The first semiconductor die comprises a at least one first bond pads formed on a peripheral region of the first semiconductor die, a at least one re-distributed layer (RDL) pads formed on a center region of the first semiconductor die, and a at least one wire routes interconnecting the first bond pads and the RDL pads. The second semiconductor die is disposed over the first semiconductor die, wherein the second semiconductor die has a at least one second bond pads electrically connecting to the RDL pads via bonding wires; wherein the RDL pad is supported by at least a buffer layer.

Bond pad structures and semiconductor devices using the same

A semiconductor device includes a first semiconductor die and a second semiconductor die. The first semiconductor includes a plurality of first bond pads formed on a peripheral region of the first semiconductor die, a plurality of re-distributed layer (RDL) pads formed on a center region of the first semiconductor die, and a plurality of wire routes interconnecting the first bond pads and the RDL pads. The second semiconductor die is disposed over the first semiconductor die, wherein the second semiconductor die has a plurality of second bond pads electrically connecting to the RDL pads via bonding wires; wherein the RDL pad is supported by at least a layer of stress-releasing metal disposed directly underneath the RDL pad.

Growing community of inventors

Hsinchu County, Taiwan

Yang-Hui Fang