Taiwan Semiconductor Manufacturing Comp. Ltd.

Yan-Zuo Tsai

Wen-Chih Chiou

Chia-Yin Chen

Yang-Chih Hsueh

Ebin Liao

Fu-Kang Tien

Tsang-Jiuh Wu

Yung-Chi Lin

I-Chun Hsu

Provided are a semiconductor device and a method for manufacturing the same, and a semiconductor package. The semiconductor device includes a die stack and a cap substrate. The die stack includes a first die, second dies stacked on the first die, and a third die stacked on the second dies. The first die includes first through semiconductor vias. Each of the second dies include second through semiconductor vias. The third die includes third through semiconductor vias. The cap substrate is disposed on the third die of the die stack. A sum of a thickness of the third die and a thickness of the cap substrate ranges from about 50 μm to about 80 μm.

Semiconductor device and method for manufacturing the same, and semiconductor package

A method and apparatus for bonding semiconductor devices are disclosed. In an embodiment, the method may include attaching a first die to a flip head of a flip module, flipping the first die with the flip module, removing the first die from the flip module after flipping the first die, inspecting the flip head of the flip module for contamination after removing the first die, cleaning the flip head with an in situ cleaning module after inspecting the flip head, and attaching a second die to the flip head after cleaning the flip head.

Method and apparatus for bonding semiconductor devices

Growing community of inventors

Hsinchu, Taiwan

Yan-Zuo Tsai