Kla Tencor Corporation

Kla-tencor Technologies Corporation

Hewlett-packard Development Company, L.p.

Yan Xiong

Robinson Piramuthu

Martin Plihal

Patrick Huet

Cho Huak Teh

Christopher W Lee

George J Kren

Eliezer Rosengaus

Paul J Sullivan

Lisheng Gao

Kenong Wu

Eugene Shifrin

Ellis Chang

Hucheng Lee

Chien-Huei (Adam) Chen

Jianxin Zhang

Tsung-Pao Fang

Shuo Sun

Qing Luo

Systems and methods for detecting defects on a specimen based on structural information are provided. One system includes one or more computer subsystems configured for separating the output generated by a detector of an inspection subsystem in an array area on a specimen into at least first and second segments of the output based on characteristic(s) of structure(s) in the array area such that the output in different segments has been generated in different locations in the array area in which the structure(s) having different values of the characteristic(s) are formed. The computer subsystem(s) are also configured for detecting defects on the specimen by applying one or more defect detection methods to the output based on whether the output is in the first segment or the second segment.

Defect detection using structural information

A method for analyzing defect information on a substrate, including logically dividing the substrate into zones, and detecting defects on the substrate to produce the defect information. The defect information from the substrate is analyzed on a zone by zone basis to produce defect level classifications for the defects within each zone. The zonal defect level classifications are analyzed according to at least one analysis method. The defect level classifications are preferably selected from a group of defect level classifications that is specified by a recipe. Preferably, the at least one analysis method includes at least one of zonal defect distribution, automatic defect classification, spatial signature analysis, and excursion detection. The defect level classifications preferably include at least one of individual defect, defect cluster, and spatial signature analysis signature. In one embodiment the defect information is logically divided into configurable zones after the defects on the substrate have been detected.

Process excursion detection

Various methods and systems for determining a defect criticality index (DCI) for defects on wafers are provided. One computer-implemented method includes determining critical area information for a portion of a design for a wafer surrounding a defect detected on the wafer by an inspection system based on a location of the defect reported by the inspection system and a size of the defect reported by the inspection system. The method also includes determining a DCI for the defect based on the critical area information, a location of the defect with respect to the critical area information, and the reported size of the defect.

Methods and systems for determining a defect criticality index for defects on wafers

Methods and systems for generating an inspection process for a wafer are provided. One computer-implemented method includes separately determining a value of a local attribute for different locations within a design for a wafer based on a defect that can cause at least one type of fault mechanism at the different locations. The method also includes determining a sensitivity with which defects will be reported for different locations on the wafer corresponding to the different locations within the design based on the value of the local attribute. In addition, the method includes generating an inspection process for the wafer based on the determined sensitivity. Groups may be generated based on the value of the local attribute thereby assigning pixels that will have at least similar noise statistics to the same group, which can be important for defect detection algorithms. Better segmentation may lead to better noise statistics estimation.

Methods and systems for generating an inspection process for a wafer

Wafer inspection systems and methods are provided. One inspection system includes a module measurement cell coupled to a host inspection system by a wafer handler. The module measurement cell is configured to inspect a wafer using one or more modes prior to inspection of the wafer by the host inspection system. The one or more modes include backside inspection, edge inspection, frontside macro defect inspection, or a combination thereof. Another inspection system includes two or more low resolution electronic sensors arranged at multiple viewing angles. The sensors are configured to detect light returned from a wafer substantially simultaneously. A method for analyzing inspection data includes selecting a template corresponding to a support device that contacts a backside of a wafer prior to inspection of the backside of the wafer. The method also includes subtracting data representing the template from inspection data generated by inspection of the backside of the wafer.

Wafer inspection systems and methods for analyzing inspection data

Systems and methods of processing scanned pages are described. In one aspect, the invention features a method of processing a sequence of scanned pages of a document in accordance with which, page number indicators are extracted from scanned pages of the document. A histogram of extracted page number indicators is computed. Scanned page sequence information is determined based at least in part on the computed histogram. A computer program and a system for implementing the scanned page processing method also are described.

Processing scanned pages

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Sunnyvale, CA, United States of America

Yan Xiong