Taiwan Semiconductor Manufacturing Comp. Ltd.

Yan-Hua Lin

Yu-Ting Lin

Lun-Kuang Tan

Sheng-Wen Chen

Chia Ping Lo

Shih Yu-Shen

Ching-Hwanq Su

Jung-Chi Jeng

Chih-Kang Chao

Chih-Cherng Jeng

Yu-Shen Shih

A semiconductor device includes a transistor having a source/drain region. A conductive contact is disposed over the source/drain region. A silicide element is disposed below the conductive contact. The silicide element has a non-angular cross-sectional profile. In some embodiments, the silicide element may have an approximately curved cross-sectional profile, for example an ellipse-like profile. The silicide element is formed at least in part by forming an amorphous region in the source/drain region via an implantation process. The implantation process may be a cold implantation process.

Contact silicide having a non-angular profile

A backside illuminated CMOS image sensor comprises an extended photo active region formed over a substrate using a first high energy ion implantation process and an isolation region formed over the substrate using a second high energy ion implantation process. The extended photo active region is enclosed by the isolation region, which has a same depth as the extended photo active region. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.

Method for increasing photodiode full well capacity

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Tainan, Taiwan

Yan-Hua Lin