Globalfoundries Inc.

International Business Machines Corporation

Yan Ding

Hanyi Ding

Sebastian Theodore Ventrone

Vibhor Jain

Robert Mark Rassel

Yves T Ngu

John S Ferrario

Thomas Kessler

Dana H Brown

In an approach to fabricating a silicon on insulator wafer, one or more semiconductor device elements are implanted and one or more shallow trench isolations are formed on a top surface of a first semiconductor wafer. A first dielectric material layer is deposited over the top surface of the first semiconductor wafer, filling the shallow trench isolations. A dielectric material layer on a bottom surface of a second semiconductor wafer is bonded to a dielectric material layer on the top of the first semiconductor wafer and one or more semiconductor devices are formed on a top surface of the second semiconductor wafer. Then, one or more through silicon vias are created connecting the one or more semiconductor devices on the top surface of the second semiconductor wafer and the one or more semiconductor device elements on the top surface of the first semiconductor wafer.

Embedding semiconductor devices in silicon-on-insulator wafers connected using through silicon vias

A broadband through printed circuit board (PCB) for millimeter wave application and methods of manufacture are disclosed. The structure includes a multiple layered body and an opening in the multiple layered body. The structure further includes at least one signal via extending through the opening. The structure further includes ground vias extending through the opening and on opposing sides of the at least one signal via. The structure further includes a ground plate above and below the opening and electrically connected to the ground vias at respective ends. The structure further includes a microstrip signal via above and below the opening and electrically connected to the at least one signal via.

Through printed circuit board (PCB) vias

Aspects of the invention provide for a Marchand balun structure and a related design method. In one embodiment, a marchand balun structure includes: a first trace for an unbalanced port on a first metal layer, the first trace comprising: an unbalanced line including a first width for a first half and a second width for a second half, wherein the second width can be different from the first width; a pair of traces for balanced ports on a second metal layer, the pair of traces comprising: a pair of balanced lines; and a ground plane on a third metal layer, the ground plane comprising: a pair of openings directly under the pair of traces for balanced ports, wherein a center of the unbalanced line of the first trace is offset from a center of the pair of balanced lines of the pair of traces.

Marchand balun structure and design method

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Essex Junction, VT, United States of America

Yan Ding