Tsinghua University

Chinese Academy of Sciences

Ya-Yu Wang

Xi Chen

Ke He

Xiao Feng

Qi-Kun Xue

Xu-Cun Ma

Li-Li Wang

Cui-Zu Chang

Li Lv

A method for generating quantum anomalous Hall effect is provided. A topological insulator quantum well film in 3QL to 5QL is formed on an insulating substrate. The topological insulator quantum well film is doped with a first element and a second element to form the magnetically doped topological insulator quantum well film. The doping of the first element and the second element respectively introduce hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1&#xd7;10cm. One of the first element and the second element magnetically dopes the topological insulator quantum well film. An electric field is applied to the magnetically doped topological insulator quantum well film to decrease the carrier density.

Method for generating quantized anomalous hall effect

An electrical device includes an insulating substrate and a magnetically doped TI quantum well film. The insulating substrate includes a first surface and a second surface. The magnetically doped topological insulator quantum well film is located on the first surface of the insulating substrate. A material of the magnetically doped topological insulator quantum well film is represented by a chemical formula of Cr(BiSb)Te, wherein 0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;2, and values of x and y satisfies that an amount of a hole type charge carriers introduced by a doping with Cr is substantially equal to an amount of an electron type charge carriers introduced by a doping with Bi, the magnetically doped topological insulator quantum well film is in 3 QL thickness to 5 QL thickness.

Electrical device having magnetically doped topological insulator quantum well film

Growing community of inventors

Beijing, China

Ya-Yu Wang