Applied Materials, Inc.

Appled Materials, Inc.

Xinyu Fu

Srinivas Gandikota

Yu Lei

Avgerinos V Gelatos

Bo Zheng

Mei Yin Chang

Seshadri Ganguli

Atif Noori

David P Thompson

Arvind Sundarrajan

Jick M Yu

Bhushan N Zope

John C Forster

Wei V Tang

Mathew Abraham

Jeffrey W Anthis

Sang Ho Yu

Steve G Ghanayem

Anantha K Subramani

Praburam Gopalraja

Xinliang Lu

Sang-Ho Yu

David Knapp

Guoqiang Jian

Wei W Wang

Xianmin Tang

Muhammad M Rasheed

Rongjun Wang

Dien-Yeh Wu

Tza-Jing Gung

Yixiong Yang

Edward P Hammond

Shih Chung Chen

Vikash Banthia

Kavita Shah

Ashish Bodke

Zhendong Liu

Wonwoo Kim

Keyvan Kashefizadeh

Mark A Perrin

Winsor Lam

Andrew S Gillard

Jonathan Robert Bakke

Yiochiro Tanaka

Feng Quan Liu

Paul F Ma

Maitreyee Mahajani

Kai Wu

Kazuya Daito

Yi Xu

Jianxin Lei

Sundar Ramamurthy

Michael Sterling Jackson

Rong Tao

David Michael Thompson

Jiang Lu

Faruk Gungor

Weifeng Ye

Chi-Chou Lin

Jing Zhou

Ajay Bhatnagar

Feiyue Ma

Hua Ai

Pulkit Agarwal

Wei Tang

San H Yu

Jian Z Ren

Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WClor WCl.

Methods for depositing fluorine/carbon-free conformal tungsten

Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

Process kit shield for improved particle reduction

Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

Method of enabling seamless cobalt gap-fill

Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

Methods of depositing metal films using metal oxyhalide precursors

Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

Methods for selectively depositing a metal silicide layer are provided herein. In some embodiments, a method of selectively depositing a metal silicide layer includes: (a) providing a substrate having a first layer to a process chamber, wherein the first layer comprises a first surface and a feature formed in the first surface comprising an opening defined by one or more sidewalls and a bottom surface wherein the sidewalls comprise one of silicon oxide or silicon nitride and wherein the bottom surface comprises at least one of silicon or germanium; (b) exposing the substrate to a precursor gas comprising a metal halide; (c) purging the precursor gas from the process chamber using an inert gas; (d) exposing the substrate to a silicon containing gas; (e) purging the silicon containing gas from the process chamber using an inert gas; (f) repeating (b)-(e) to selectively deposit a metal silicide along the bottom surface to a predetermined thickness; and (g) annealing the substrate after depositing the metal silicide layer.

Methods for selective deposition of metal silicides via atomic layer deposition cycles

Methods for selectively depositing a cobalt layer are provided herein. In some embodiments, methods for selectively depositing a cobalt layer include: exposing a substrate to a first process gas to passivate an exposed dielectric surface, wherein the substrate comprises a dielectric layer having an exposed dielectric surface and a metal layer having an exposed metal surface; and selectively depositing a cobalt layer atop the exposed metal surface using a thermal deposition process.

Methods for thermally forming a selective cobalt layer

Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.

Methods for forming low-resistance contacts through integrated process flow systems

Processing methods comprising exposing a substrate to a nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal-containing compound and a second reactive gas to form a metal-containing film on the substrate.

Tungsten films by organometallic or silane pre-treatment of substrate

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Pleasanton, CA, United States of America

Xinyu Fu