Lam Research Corporation

Xingcai Su

Peter K Loewenhardt

Di Wu

Dean Jay Larson

Kenji Takeshita

Babak Kadkhodayan

Bi-Ming Yen

William M Denty, Jr

Bi Ming Yen

Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.

Uniform etch system

An apparatus for providing different gases to different zones of a processing chamber is provided. A gas supply for providing an etching gas flow is provided. A flow splitter in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs is provided. A tuning gas system in fluid connection to at least one of the legs of the plurality of legs is provided.

Gas distribution system with tuning gas

A semiconductor chip formed on a substrate is provided. An oxygen-doped silicon carbide etch stop layer is formed over the substrate. An organosilicate glass layer is formed over the oxygen-doped silicon carbide etch stop layer. A feature is selectively etched in the organosilicate glass layer using an etch with an organosilicate glass to oxygen-doped silicon carbide selectivity greater than 5:1.

Method for selectively etching organosilicate glass with respect to a doped silicon carbide

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Fremont, CA, United States of America

Xingcai Su