Hwatsing Technology Co., Ltd.

Tsinghua University

Hwatsing (Beijing) Technology Co., Ltd.

Xinchun Lu

Yongyong He

Pan Shen

Tongqing Wang

Dewen Zhao

Zhenjie Xu

Jie Liu

Jian Wang

Qian Zhao

Yonggang Meng

Jianbin Luo

Kun Li

Fangxin Tian

Yingming Wu

Haiyang Xu

Xiangyu Chen

Rui Tan

Zilian Qu

Hui Ci

Qingbo Liang

Hegeng Mei

Lianqing Zhang

Zhaohui Pei

A monitoring method and a device for chemical mechanical polishing are provided. The method includes: loading a to-be-polished wafer with a carrier, attaching the wafer to a polishing pad on a polishing platen, and supplying slurry between the polishing pad and the wafer with a slurry supply apparatus; conditioning the polishing pad with a conditioner, and obtaining strain data of the conditioner, wherein the conditioner includes a drive arm and a conditioning head, the conditioning head conditions the polishing pad with the support of the drive arm, the drive arm undergoes a strain in response to a force applied by the the conditioning head, and the strain data is used to indicate a strain value of the drive arm; determining a conditioning deviation based on the strain data, and determining a wear state of the polishing pad based on the conditioning deviation.

Monitoring method for chemical mechanical polishing and chemical mechanical polishing device

A method for measuring a thickness of a metal film, a polishing device, and a medium are provided. The method includes: determining a reference thickness of the metal film based on measurement signals, the measurement signals being indicative of measured thicknesses of different positions on the metal film; determining sub-adjustment parameters based on an adjustment parameter included in the reference thickness, wherein the adjustment parameter includes sub-adjustment parameters corresponding to topographies of different edges of the metal film; and adjusting, based on the sub-adjustment parameters, a coordinate value of a sampling point in a to-be-processed area of the metal film, processing, based on an adjusted coordinate value, an amplitude of the signal corresponding to the sampling point in the measurement signals, and determining a thickness of the metal film based on the processed signal amplitude.

Method for determining thickness of metal film of wafer, polishing device, and medium

An apparatus for chemical-mechanical polishing is provided, including: a plurality of polishing sections spaced apart from one another, each polishing section including: a bracket, a carrier head and a platen, the carrier head being disposed on the bracket and configured to move between a polishing position and a conveying position, in which when the carrier head is located at the polishing position, the carrier head is located above the platen; and a conveying assembly, the conveying assembly including: a rotating plate and a plurality of loading and unloading tables, the plurality of loading and unloading tables being spaced apart from one another, disposed on the rotating plate and configured to rotate along with the rotating plate, in which when the carrier head is located at the conveying position, the carrier head is corresponding to one of the plurality of loading and unloading tables.

Apparatus for chemical-mechanical polishing

A device for globally measuring a thickness of a metal film (), comprises: a base (); a rotating unit () comprising a fixed member () fixed on the base () and a rotating member () having a rotating joint (); a working table () fixed on the rotating member () and having a vacuum passage which is formed therein and connected with the rotating joint (); a linear driving unit () including a guide rail () fixed on the base () and a sliding block () slidable along the guide rail (); a cantilever beam () disposed horizontally and defining a first end fixed with the sliding block () and a second end; a measuring head () connected to the second end of the cantilever beam (), facing a surface of the working table () and having an eddy current probe () disposed therein.

Device for globally measuring thickness of metal film

A method for measuring a film thickness of a film on an edge of a wafer, comprising: off-line detecting a film at a detection point on the wafer by a four-point probe method to obtain a real film thickness of the film at the detection point, and detecting a distance from the detection point to a center of the wafer using a length measurement, in which the detection point is located between the center of the wafer and a edge point of the wafer; detecting the film at the detection point using an eddy current transducer to obtain a detected film thickness of the film at the detection point; determining a film thickness measuring correction factor according to the real film thickness, the detected film thickness at the detection point and the distance from the detection point to the center of the wafer; and measuring the film on an edge of the wafer using the eddy current transducer to obtain a measured film thickness of the film on the edge of the wafer and correcting the measured film thickness of the film on an edge of the wafer according to the film thickness measuring correction factor to obtain a real film thickness of the film on the edge of the wafer.

Method for measuring thickness of film on wafer edge

A chemical-mechanical polishing machine includes a work table, polishing platen mounted onto the work table, pad conditioner and slurry-delivery device mounted on the work table and disposed near the polishing platen, and polishing-head support mounted on the work table and including a base plate and supporting side plates. The base plate is formed with a groove in a 'thickness' direction. A loading and unloading table is mounted on the work table, disposed below the base plate, and opposed to the polishing platen. A polishing head is rotatably disposed on the polishing-head support, movable in the longitudinal direction, and passes through the groove to extend downwardly. A robotic manipulator is disposed near the work table for placing a wafer on the loading and unloading table and taking the wafer away from it. A chemical-mechanical polishing apparatus includes an array of a plurality of the machine.

Chemical mechanical polishing machine and chemical mechanical polishing apparatus comprising the same

A measuring device for measuring a film thickness of a silicon wafer () comprises: position and velocity sensors () linearly arranged along a longitudinal direction into first and second position and velocity sensor arrays spaced apart from each other in a lateral direction, in which the position and velocity sensors () in the first position and velocity sensor array are in one-to-one correspondence with the position and velocity sensors () in the second position and velocity sensor array in the lateral direction; an eddy current sensor () disposed in a symmetrical plane between the first position and velocity sensor array and the second position and velocity sensor array and perpendicular to the lateral direction; and a controller connected to the position and velocity sensors () and the eddy current sensor () respectively for controlling measurement of the thickness of the film according to detection signals from the position and velocity sensors () and the eddy current sensor ().

Measuring device for measuring film thickness of silicon wafer

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Beijing, China

Xinchun Lu