Changxin Memory Technologies, Inc.

Anhui University

Xin Huang

Zhixiang Huang

Shih-Shin Wang

Chao Xie

Wenhua Yang

The present disclosure belongs to the technical field of three-dimensional packaging, and in particular relates to a bonding method for a copper-copper metal. The bonding method includes: subjecting a copper-plated surface of a clean copper-plated substrate to pretreatment with hydrazine hydrate under a protective atmosphere, to obtain a copper-plated substrate to be bonded, where the copper-plated surface is kept at 50° C. to 90° C.; and subjecting a plurality of the copper-plated substrates to be bonded to pressurized bonding at 200° ° C. to 300° ° C. under the protective atmosphere.

Bonding method for copper-copper metal with hydrazine hydrate

Embodiments of this application provide a method, an apparatus and a device for measuring a semiconductor structure. Before measurement of a to-be-measured semiconductor structure, a reference semiconductor structure corresponding to the to-be-measured semiconductor structure is set, and a first simulation model corresponding to the to-be-measured semiconductor structure and a second simulation model corresponding to the reference semiconductor structure are established, some structure parameters of the to-be-measured semiconductor structure have parameter values different from those of corresponding structure parameters of the reference semiconductor structure. During measurement of the to-be-measured semiconductor structure, both the to-be-measured semiconductor structure and the reference semiconductor structure are simultaneously measured by using an OCD measurement technology, to find structure parameters that can satisfy both the first simulation model and the second simulation model, and parameter value of each structure parameter finally determined for the first simulation model is used as structure parameter of the to-be-measured semiconductor structure.

Method, apparatus and device for measuring semiconductor structure

A measurement device and method for a semiconductor structure are provided. The measurement device for the semiconductor structure includes a bearing platform, a clamping mechanism, and an image acquisition system. The clamping mechanism is installed on the bearing platform and includes a clamp disposed along a vertical direction. The clamp is configured to clamp the semiconductor structure such that the semiconductor structure is clamped with a to-be-measured surface facing a side. The image acquisition system is disposed by a side of the clamping mechanism, and is configured to acquire a three-dimensional morphology of the semiconductor structure from the side.

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Hefei, China

Xin Huang