Applied Materials, Inc.

Xiawan Yang

Anisul Haque Khan

Wen Teh Chang

Gaurav Saraf

Farid Abooameri

Bradley Scott Hersch

Anchuan Wang

Deenesh Padhi

Karthik Janakiraman

Rui Cheng

Qian Fu

Zihui Li

Takehito Koshizawa

Hang Yu

Krishna Nittala

Jinhan Choi

Chia-Ling Kao

Russell Chin Yee Teo

Chuanxi Yang

Wei Wu

Feng Zhang

Yeonju Kwak

Jeong Hwan Kim

Siyu Zhu

Menghui Li

Ming-Yuan Chuang

Susumu Shinohara

Juan Guo

Qu Jin

Exemplary processing methods may include depositing a boron-containing material or a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include etching portions of the boron-containing material or the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate. The methods may also include removing remaining portions of the boron-containing material or the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor.

Integration processes utilizing boron-doped silicon materials

Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.

Boron nitride for mask patterning

Disclosed herein is a high throughput method for providing directional protection to a three dimensional feature on a substrate by forming a multi-layer amorphous carbon-containing coating with tunable conformality thereon. Forming the multi-layer amorphous carbon-containing coating with tunable conformality includes depositing a base layer onto a horizontal surface of the three dimensional features, and a second layer over the base layer and onto a first portion of a vertical or inclined surface of the three dimensional feature. The base layer includes a first material with a first sticking coefficient and the second layer includes a second material with a second sticking coefficient that is smaller than the first sticking coefficient. The first material includes no fluorine or less fluorine than the second material. Also disclosed herein is a method of manufacturing a three dimensional device as well as three dimensional devices.

Amorphous carbon multilayer coating with directional protection

Etch rate distributions are captured at a succession of hardware tilt angles of the RF source power applicator relative to the workpiece and their non-uniformities computed, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset &#x394;&#x3b1; in tilt angle &#x3b1; between the non-uniformity functions of the two plasma reactors is detected. The two plasma reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset &#x394;&#x3b1;.

Method of matching two or more plasma reactors

Etch rate distribution non-uniformities are predicted for a succession of hardware tilt angles of the RF source applicator relative to the workpiece, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset &#x394;&#x3b1; in tilt angle &#x3b1; between the non-uniformity functions of the two plasma reactors is detected. The two reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset &#x394;&#x3b1;.

Predictive method of matching two plasma reactors

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San Jose, CA, United States of America

Xiawan Yang