Az Electronic Materials (luxembourg) S.a.r.l.

Merck Patent Gmbh

Samsung Electronics Co., Ltd.

Az Electronic Materials USA Corp.

Az Electronics Materials (luxembourg) S.a.r.l.

Az Electronic Material (Luxembourg) S.ár.l.

Xiaowei Wang

Georg Pawlowski

Tetsuo Okayasu

Tatsuro Nagahara

Masato Suzuki

Yuriko Matsuura

Yusuke Hama

Hyun-woo Kim

Takafumi Kinuta

Wenbing Kang

Cheol Hong Park

[Subject] There is provided a gap filling composition which can reduce pattern collapse and a pattern forming method using the composition. [Solution means] There is provided a gap filling composition including a polymer having a certain structure and an organic solvent. There is provided a pattern forming method using a certain polymer.

Gap filling composition and pattern forming method using composition containing polymer

There is provided a gap filling composition which can reduce pattern collapse and a pattern forming method using the composition. There is provided a gap filling composition including a gap filling compound, an organic solvent, and as required, water, the gap filling compound having a certain structure and containing hydroxyl groups, carboxyl groups, or amino groups intramolecularly. There is provided a pattern forming method using a low molecular weight compound.

Gap filling composition and pattern forming method using low molecular weight compound

[Problem] To provide a composition, which is a reverse pattern formation composition comprising an aqueous solvent having little influence on a resist pattern, and which is excellent in flatness and filling properties after coating and has excellent etching resistance. Furthermore, a method for forming a pattern using the same is provided. [Means for Solution] A reverse pattern formation composition comprising a polysiloxane compound comprising a repeating unit having a nitrogen-containing group and a solvent comprising water, and a method for forming a fine pattern using the same.

Reverse pattern formation composition, reverse pattern formation method, and device formation method

The present invention relates to a shrink material composition for fattening a resist pattern prepared from a negative-tone lithography process, comprising at least one polymer and at least one organic solvent, wherein the at least one polymer comprises at least one structural unit of a nitrogen heteroaromatic ring system.

Composition for forming fine resist pattern and pattern forming method using same

[Object] To provide compositions for forming a top coat layer capable of forming patterns with an excellent roughness and pattern shape in a pattern formation method by exposure to extreme ultraviolet rays, and a pattern formation method using the composition. [Means for solving problem] Provided are compositions for forming a top coat layer comprises an aromatic compound having an aromatic hydroxyl group and an aqueous solvent; and a method of forming patterns by applying the composition onto the resist surface and subjecting the resultant to exposure and development. This composition can further comprise binders.

Top-layer membrane formation composition and method for forming resist pattern using same

The objective of this invention is to provide a composition for forming a topcoat layer enabling to produce a pattern excellent in roughness and in pattern shape; and also to provide a pattern formation method employing that composition is described. The means for solving this objective is a composition for forming a topcoat layer, comprising a solvent and a fullerene derivative having a hydrophilic group; and also a method of forming a pattern by casting the above composition on a resist surface and then by subjecting it to exposure and development.

Composition for forming overlay film, and resist pattern formation method employing the same

Provided is a composition for forming a topcoat layer, the composition including a graphene derivative including a hydrophilic group; and a solvent. Also provided is a pattern formation method, including disposing a resist composition on a substrate, to form a resist layer; coating the resist layer with a composition including a graphene derivative including a hydrophilic group, and a solvent; heating the composition to harden the composition; subjecting the resist layer to exposure using extreme ultraviolet light; and developing exposed resist layer with an alkali aqueous solution.

Composition for forming topcoat layer and resist pattern formation method employing the same

To provide a composition for forming a topcoat layer enabling to produce a pattern excellent in roughness and in pattern shape, and also to provide a pattern formation method employing that. A composition for forming a topcoat layer, containing a solvent and a triphenylene derivative having a hydrophilic group; and also a method of forming a pattern by casting the above composition on a resist surface and then by subjecting it to exposure and development. The composition may further contain a polymer.

The present invention provides a rinse solution for lithography and a pattern formation method using the solution. They can improve the pattern collapse, surface roughness and surface defects. The solution contains at least a sulfonic acid a nonionic surfactant having an alkyleneoxy group and water.

Rinse solution for lithography and pattern formation method employing the same

The present invention provides a pattern formation method capable of preventing formation of surface defects. In the method, a resist surface after subjected to exposure is coated with an acidic film and then subjected to heating treatment. This method is suitably adopted in a process employing liquid immersion lithography and/or light of short wavelength, such as ArF excimer laser beams, for producing a very fine pattern.

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Kakegawa, Japan

Xiaowei Wang