Micron Technology Incorporated

Xiaopeng Qu

Hyunsuk Chun

Shams U Arifeen

Amy R Griffin

Chan H Yoo

Koustav Sinha

Wesley J Orme

Brandon P Wirz

Eiichi Nakano

Andrew M Bayless

Semiconductor device assemblies are provided with a package substrate including one or more layers of thermally conductive material configured to conduct heat generated by one or more of semiconductor dies of the assemblies laterally outward towards an outer edge of the assembly. The layer of thermally conductive material can comprise one or more allotropes of carbon, such as diamond, graphene, graphite, carbon nanotubes, or a combination thereof. The layer of thermally conductive material can be provided via deposition (e.g., sputtering, PVD, CVD, or ALD), via adhering a film comprising the layer of thermally conductive material to an outer surface of the package substrate, or via embedding a film comprising the layer of thermally conductive material to within the package substrate.

Substrates for semiconductor device assemblies and systems with improved thermal performance and methods for making the same

A microelectronic device package may include one or more semiconductor dice coupled to a substrate. The microelectronic device package may further include a lid coupled to the substrate, the lid defining a volume over and around the one or more semiconductor die. The microelectronic device package may further include a thermally conductive dielectric filler material substantially filling the volume defined around the semiconductor die.

Lidded microelectronic device packages and related systems, apparatus, and methods of manufacture

Heat spreaders for use in semiconductor device testing, such as burn-in testing, are disclosed herein. In one embodiment, a heat spreader is configured to be coupled to a burn-in testing board including a plurality of sockets. The heat spreader includes (i) a frame having a plurality of apertures, and (ii) a plurality of heat sinks movably positioned within corresponding ones of the apertures. When the heat spreader is coupled to the burn-in testing board, the heat sinks are configured to extend into corresponding ones of the sockets to thermally contact semiconductor devices positioned within the sockets. The heat spreader can promote a uniform temperature gradient across the burn-in board during testing of the semiconductor devices.

Heat spreaders for use in semiconductor device testing, such as burn-in testing

A semiconductor component system includes a motherboard and a cooling system mounted to the motherboard. The cooling system includes sidewalls projecting from the motherboard. A sub-motherboard extends between the sidewalls and is spaced apart from the motherboard. The sidewalls and the sub-motherboard define a cooling channel over the motherboard. A connector is attached to the sub-motherboard and is configured to receive a semiconductor device daughterboard. The connector has contacts to electrically couple the semiconductor device daughterboard to the sub-motherboard.

Thermal management of circuit boards

Semiconductor device assemblies are provided with one or more layers of thermally conductive material disposed between adjacent semiconductor dies in a vertical stack. The thermally conductive material can be configured to conduct heat generated by one or more of the semiconductor dies in laterally outward towards an outer edge of the assembly. The layer of thermally conductive material can comprise one or more allotropes of carbon, such as diamond, graphene, graphite, carbon nanotubes, or a combination thereof. The layer of thermally conductive material can be provided via deposition (e.g., sputtering, PVD, CVD, or ALD), or via adhering a film comprising the layer of thermally conductive material to one or more of the semiconductor dies.

Semiconductor device assemblies and systems with improved thermal performance and methods for making the same

Semiconductor devices and semiconductor device packages may include at least one first semiconductor die supported on a first side of a substrate. The at least one first semiconductor die may include a first active surface. A second semiconductor die may be supported on a second, opposite side of the substrate. The second semiconductor die may include a second active surface located on a side of the second semiconductor die facing the substrate. The second semiconductor die may be configured to have higher median power consumption than the at least one first semiconductor die during operation. An electronic system incorporating a semiconductor device package is disclosed, as are related methods.

Semiconductor devices, semiconductor device packages, electronic systems including same, and related methods

Semiconductor packages and/or assemblies having microchannels, a microchannel module, and/or a microfluidic network for thermal management, and associated systems and methods, are disclosed herein. The semiconductor package and/or assembly can include a substrate integrated with a microchannel and a coolant disposed within the microchannel to dissipate heat from a memory device and/or a logic device of the semiconductor package and/or assembly. The microchannel can be configured beneath the memory device and/or the logic device.

Thermal management of GPU-HBM package by microchannel integrated substrate

A semiconductor device includes an array of flexible connectors configured to mitigate thermomechanical stresses. In one embodiment, a semiconductor assembly includes a substrate coupled to an array of flexible connectors. Each flexible connector can be transformed between a resting configuration and a loaded configuration. Each flexible connector includes a conductive wire electrically coupled to the substrate and a support material at least partially surrounding the conductive wire. The conductive wire has a first shape when the flexible connector is in the resting configuration and a second, different shape when the flexible connector is in the loaded configuration. The first shape includes at least two apices spaced apart from each other in a vertical dimension by a first distance, and the second shape includes the two apices spaced apart from each other in the vertical dimension by a second distance different than the first distance.

Semiconductor devices with flexible connector array

Assemblies include at least one substrate, at least one electronic device coupled to the substrate, and heat dissipation elements. The heat dissipation elements comprise at least one heat spreader in communication with the at least one electronic device and at least one heat sink in communication with the at least one heat spreader. Methods of dissipating heat energy include transferring heat energy from memory devices to heat spreaders positioned adjacent to the memory devices and transferring the heat energy from the heat spreaders to a heat sink.

Assemblies including heat dispersing elements and related systems and methods

This patent application relates to methods and apparatus for temperature modification and reduction of contamination in bonding stacked microelectronic devices with heat applied from a bond head of a thermocompression bonding tool. The stack is substantially enclosed within a skirt carried by the bond head to reduce heat loss and contaminants from the stack, and heat may be added from the skirt.

Methods and apparatus for temperature modification and reduction of contamination in bonding stacked microelectronic devices

Heat spreaders for use in semiconductor device testing, such as burn-in testing, are disclosed herein. In one embodiment, a heat spreader is configured to be coupled to a burn-in testing board including a plurality of sockets. The heat spreader includes a base portion and a plurality of protrusions extending from the base portion. When the heat spreader is coupled to the burn-in testing board, the protrusions are configured to extend into corresponding ones of the sockets to thermally contact semiconductor devices positioned within the sockets. The heat spreader can promote a uniform temperature gradient across the burn-in board during testing of the semiconductor devices.

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Boise, ID, United States of America

Xiaopeng Qu